Display panel and liquid crystal display apparatus including the same

ABSTRACT

A display panel is provided. The display panel includes a substrate and a pixel electrode disposed on the substrate and having a pair of first primary edges facing each other and a pair of second primary edges connected to the first primary edges and facing each other, wherein the second primary edges include a plurality of protrusions of the pixel electrode having the shape of sawteeth.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.11/398,242 filed Apr. 5, 2006 now U.S. Pat. No. 7,639,333, which claimspriority to Korean Patent Applications No. 2005-0028590, filed on Apr.6, 2005 and No. 2005-75768, filed on Aug. 18, 2005, the disclosures ofwhich are each hereby incorporated by reference herein in theirentireties.

BACKGROUND OF THE INVENTION

(a) Field of the Invention

The present invention relates to a liquid crystal display apparatus.

(b) Description of the Related Art

A liquid crystal display (LCD) is one of the more widely used flat paneldisplay apparatuses. An LCD includes e.g., two panels having electricfield generating electrodes such as pixel electrodes and a commonelectrode, a liquid crystal layer interposed between the two panels, andpolarizers disposed on outer surfaces of the panels. The liquid crystaldisplay apparatus displays an image by applying a voltage to theelectric field generating electrodes to generate an electric field inthe liquid crystal layer which in turn controls the alignment of liquidcrystal molecules in the liquid crystal layer to control polarization ofincident light.

An example of a type of a liquid crystal display apparatus is thevertically aligned mode liquid crystal display apparatus in which liquidcrystal molecules are arranged such that major axes of the liquidcrystal molecules are perpendicular to the panels in the state that noelectric field is generated. The vertically aligned mode liquid crystaldisplay apparatus has a high contrast ratio and it can readily provide awide reference viewing angle.

To implement the wide viewing angle in the vertically aligned modeliquid crystal display apparatus, a method of forming cutout portions inelectric field generating electrodes and a method for formingprotrusions on the electric field generating electrodes has beenproposed. Since the cutout portions and the protrusions can control thetilted directions of liquid crystal molecules, the tilted directions ofthe liquid crystal molecules can be distributed into various directionsby varying the cutout portions and the protrusions, to thereby obtain awide reference viewing angle.

Moreover, for the purposes of light efficiency, it is desirable that thetilted direction of the liquid crystal molecules have an angle of 45°with respect to the polarization direction of the polarizers. Inaddition with the vertically aligned mode liquid crystal displayapparatus, the polarizers are attached so that the polarizationdirections of the polarizers are parallel or perpendicular to the gatelines or the data lines. Therefore, the cutout portions or theprotrusions are disposed to extend in a direction with an angle of 45°with respect to the gate lines or the data lines.

However, in the situation where the pixel electrodes of the verticallyaligned mode liquid display apparatus have the shape of a rectangle andare parallel to the gate lines and the data lines, the alignment of theliquid crystal molecules is disturbed due to an electric field generatedbetween the adjacent pixel electrodes, so that a phenomenon known astexture may occur. Consequently, as a result of the above mentionedtexture, the transmittance of the liquid crystal display apparatus maybe reduced.

In an attempt to reduce texture, a method of overlapping a portion of acutout portion of the common electrode with a side of the pixelelectrode has been proposed. However, even with above proposed method,the aperture ratio of the liquid crystal display apparatus may still bereduced.

Thus, there is a need for a display panel which is capable of increasingthe aperture ratio and the transmittance of a liquid crystal displayapparatus and for a liquid crystal display apparatus including thedisplay panel.

SUMMARY OF THE INVENTION

According to an exemplary embodiment of the present invention, a displaypanel is provided. The display panel comprises a substrate and a pixelelectrode. The pixel electrode is disposed on the substrate and has apair of first primary edges facing each other and a pair of secondprimary edges connected to the first primary edges and which face eachother. Moreover, the second primary edges include a plurality ofprotrusions of the pixel electrode having the shape of sawteeth.

According to another exemplary embodiment of the present invention, adisplay panel is provided. The display panel comprises a substrate, aplurality of gate lines disposed on the substrate, a plurality of datalines perpendicular to the gate lines, a plurality of thin filmtransistors connected to the gate lines and the data lines. The displaypanel further includes a plurality of pixel electrodes connected to thethin film transistors. Each of the pixel electrodes comprises: a pair offirst primary edges parallel to the gate line and facing each other,anda pair of second primary edges connected to the first primary edges andwhich face each other and include protrusions having a shape ofsawteeth.

In the above exemplary embodiments of the present invention, the pixelelectrode may include a plurality of cutout portions which have aslanted angle with respect to the first primary edges.

In addition, the protrusion may include a first edge which has an angleof about 135° or more or about 45° or less with respect to the cutoutportions.

In addition, the protrusion may further include a second edge which isparallel to the cutout portions.

In addition, the second edge may be located on an extension line of anedge of the cutout portion.

In addition, an envelope of the protrusions and the first primary edgesmay constitute a rectangle.

In addition, at least one of corners of the rectangle may be a chamferedslanted edge.

In addition, the chamfered slanted edge of the rectangle may have anangle of about 45° with respect to the first primary edges.

In addition, the protrusions may overlap the data lines.

In addition, the protrusions of the adjacent second primary edges of theadjacent pixel electrodes may be disposed to be engaged with each other.

In addition, the facing edges of the protrusions which are disposed tobe engaged with each other may be parallel to each other.

According to another exemplary embodiment of the present invention, aliquid crystal display apparatus is provided. The liquid crystal displayapparatus comprises: a plurality of pixel electrodes, a common electrodefacing the pixel electrodes, and a liquid crystal layer interposedbetween the pixel electrodes and the common electrode. The liquidcrystal display apparatus further comprises a first and a secondpartition member dividing each of the pixel electrodes into a pluralityof sub areas, wherein each of the sub areas includes a pair of primaryedges and a plurality of secondary edges connected thereto. In addition,the primary edges of the two sub areas included in the pixel electrodesare disposed to deviate from each other.

In the above exemplary embodiments of the present invention, the primaryedges have a slanted angle with respect to the first and secondpartition members.

In addition, at least one of the secondary edges of each of the subareas may have an angle of about 135° or more with respect to theprimary edges.

In addition, the primary edges of each of the sub areas may include afirst primary edge and a second primary edge which is shorter than thefirst primary edge, and the first primary edge may be constructed bycombining an edge of the first or second partition members with aportion of a side of the pixel electrode.

In addition, the second primary edge of each of the sub areas may beconstructed with an edge of the second partition member or with a cornerof the pixel electrode.

In addition, the first partition member may be disposed in each of thepixel electrodes, and the second partition member may be disposed in thecommon electrode.

In addition, a portion of sides of the pixel electrode may constitutethe secondary edge of each of the sub areas, and the second partitionmember may be disposed not to overlap a portion of the sides of thepixel electrode which constitute the secondary edge of each of the subareas.

In addition, the first and second partition members may include cutoutportions.

In addition, the common electrode may include connection cutout portionswhich face gaps between adjacent pixel electrodes. In addition, theconnection cutout portions may connect adjacent second partitionmembers.

In addition, the connection cutout portions may have an obtuse anglewith respect to the second partition members. In addition, widths of theconnection cutout portions may be larger than those of the gaps.

In addition, the first and second partition members may be parallel toeach other.

In addition, the connection cutout portions may be parallel to thesecondary edges of the sub areas.

In addition, the width of the connection cutout portions may be largerby about 8 μm than those of the gaps.

In addition, the liquid crystal display apparatus may further comprisedata lines which overlap the secondary edges of the sub areas. Inaddition, the connection cutout portions may face the data lines.

In addition, the liquid crystal display apparatus may further comprise alight blocking member which faces the data lines.

In addition, a width of the light blocking member may be equal to thatof each of the data lines.

In addition, a portion of the secondary edges of the sub areas may bedisposed not to overlap the data lines, and the light blocking membermay further include an expansion portion which covers the portion of thesecondary edges of the sub areas which is disposed not to overlap thedata lines.

In addition, each of the pixel electrodes may include at least two subpixel electrodes which are physically separated from each other by aportion of the second partition members.

In addition, voltages of at least the two sub pixel electrodes may bedifferent from each other.

In addition, at least the two sub pixel electrodes may be capacitivelycoupled.

In addition, the sub pixel electrodes may be connected to thin filmtransistors.

In addition, the sub pixel electrodes of one pixel electrode may beconnected to different data lines, and the sub pixel electrodes of onepixel electrode may be connected to the same gate line.

In addition, the sub pixel electrodes of one pixel electrode may beconnected to different gate lines, and the sub pixel electrodes of onepixel electrode may be connected to the same data line.

According to another exemplary embodiment of the present invention, aliquid crystal display apparatus is provided. The liquid crystal displayapparatus comprises a first and a second substrate facing each other, aplurality of pixel electrodes disposed on the first substrate and acommon electrode disposed on the second substrate. The liquid crystaldisplay apparatus further includes a liquid crystal layer interposedbetween the first and second substrates. The common electrode includesfirst cutout portions facing gaps between the adjacent pixel electrodes.

In addition, the common electrode may include second cutout portionsfacing the pixel electrodes. In addition, the first cutout portions mayconnect the adjacent second cutout portions.

In addition, the first cutout portions may have an obtuse angle withrespect to the second cutout portions. In addition, widths of the firstcutout portions may be larger than those of the gaps.

In addition, the widths of the first cutout portions may be larger byabout 8 μm than those of the gaps.

In addition, the pixel electrode may include third cutout portion whichare disposed with the first cutout portions. In addition, the first andthird cutout portions may be parallel to each other.

In addition, a portion of a boundary line of the pixel electrode may beparallel to a boundary line of the first cutout portion.

In addition, the first substrate may comprise: gate and data lines whichare insulated from the first substrate and interest each other, thinfilm transistors which are connected to the gate and data lines, andpixel electrodes which are connected to the thin film transistors.

In addition, the gate lines may have an angle of about 45° with respectto the first cutout portions. In addition, the boundary line of thepixel electrode may overlap a portion of the data line.

In addition, the first cutout portions may face the data lines. Inaddition, one end of the second cutout portion may be formed to open.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail exemplary embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention;

FIG. 2 is a view showing a layout of a thin film transistor panel forthe liquid crystal display apparatus of FIG. 1;

FIG. 3 is a view showing a layout of a common electrode panel for theliquid crystal display apparatus of FIG. 1;

FIG. 4 is a cross sectional view showing the liquid crystal displayapparatus taken along line IV-IV of FIG. 1;

FIG. 5 is a view showing a layout of a common electrode and a pixelelectrode of FIG. 1;

FIG. 6 is an enlarged view showing a portion between adjacent pixelelectrodes of FIG. 1;

FIG. 7 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention;

FIG. 8 is a view showing a layout of a thin film transistor panel forthe liquid crystal display apparatus of FIG. 7;

FIG. 9 is a view showing a layout of a common electrode panel for theliquid crystal display apparatus of FIG. 7;

FIG. 10 is a cross sectional view showing the liquid crystal displayapparatus taken along line X-X of FIG. 7;

FIG. 11 is a cross sectional view taken along line XI-XI of FIG. 6;

FIG. 12 is a cross sectional view taken along line XII-XII of FIG. 7;

FIG. 13 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention;

FIG. 14 is a cross sectional view showing the liquid crystal displayapparatus taken along line XIV-XIV of FIG. 13;

FIG. 15 is a cross sectional view showing a liquid crystal displayapparatus according to an exemplary embodiment of the present invention,which is taken along line IV-IV of FIG. 1;

FIG. 16 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention;

FIG. 17 is a view showing a layout of a thin film transistor panel forthe liquid crystal display apparatus of FIG. 16;

FIG. 18 is a view showing a layout of a common electrode panel for theliquid crystal display apparatus of FIG. 16;

FIG. 19 is a cross sectional view showing the liquid crystal displayapparatus taken along line XIX-XIX of FIG. 16;

FIG. 20 is a cross sectional view showing the liquid crystal displayapparatus taken along line XX-XX of FIG. 16;

FIG. 21 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention;

FIG. 22 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXII-XXII of FIG. 21;

FIG. 23 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXIII-XXIII of FIG. 21;

FIG. 24 is a schematic equivalent circuit diagram of a pixel of theliquid crystal display apparatus shown in FIG. 21.

FIG. 25 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention.

FIG. 26 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXVI-XXVI of FIG. 25.

FIG. 27 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXVII-XXVII of FIG. 25;

FIG. 28 is a view showing a layout of a liquid crystal display apparatusaccording to an exemplary embodiment of the present invention;

FIG. 29 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXIX-XXIX of FIG. 28; and

FIG. 30 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXI-XXX of FIG. 28.

DETAILED DESCRIPTION OF THE EXEMPLARY EMBODIMENTS

Hereinafter, exemplary embodiments of the present invention will bedescribed in detail with reference to the attached drawings such thatthe present invention can be easily put into practice by those skilledin the art. However, the present invention may be implemented in variousaspects. The present invention is not limited to the exemplaryembodiments described hereinafter.

Now, a liquid crystal display apparatus according to an exemplaryembodiment of the present invention will be described in detail withreference to FIGS. 1 to 6. FIG. 1 is a view showing a layout of a liquidcrystal display apparatus according to an exemplary embodiment of thepresent invention. FIG. 2 is a view showing a layout of a thin filmtransistor panel for the liquid crystal display apparatus of FIG. 1.FIG. 3 is a view showing a layout of a common electrode panel for theliquid crystal display apparatus of FIG. 1. FIG. 4 is a cross sectionalview showing the liquid crystal display apparatus taken along line IV-IVof FIG. 1. FIG. 5 is a view showing a layout of a common electrode and apixel electrode of FIG. 1. FIG. 6 is an enlarged view showing a portionbetween adjacent pixel electrodes of FIG. 1.

The liquid crystal display apparatus includes a thin film transistorpanel 100 and a common electrode panel 200 which face each other and aliquid crystal layer 300 interposed between the panels 100 and 200.

Firstly, the thin film transistor panel 100 will be described in detailwith reference to FIGS. 1, 2, and 4.

A plurality of gate lines 121 and a plurality of storage electrode lines131 are disposed on an insulating substrate 110 made of a transparentglass or a plastic material.

The gate lines 121 transmitting gate signals mainly extend in thetransverse direction. The gate lines 121 include a plurality of gateelectrodes 124 which protrude upwardly and downwardly and end portions129 which have wide areas for connection to other layers or externaldriver circuits. A gate driver circuit which generates the gate signalsmay be mounted on a flexible printed circuit film attached on thesubstrate 110. Alternatively, the gate driver circuit may be directlymounted on the substrate 110. Otherwise, the gate driver circuit may beintegrated in the substrate 110. In the case where the gate drivercircuit is integrated in the substrate 110, the gate lines 121 areextended to be directly connected to the gate driver circuit.

The storage electrode lines 131 which are applied with predeterminedvoltages include stem lines which extend substantially in parallel tothe gate lines 121, a plurality of storage electrode sets of first,second, third, and fourth storage electrodes 133 a, 133 b, 133 c, and133 d, and a plurality of connection portions 133 e. Each of the storageelectrode lines 131 is disposed between adjacent two gate lines 121, andthe stem line thereof is closer to the upper one of the two gate lines121.

The first and second storage electrodes 133 a and 133 b extend in thelongitudinal direction to face each other. The first storage electrode133 a includes a fixed end connected to the stem line and a free endopposite to the fixed end, and the free end includes a protrusion. Thethird and fourth storage electrodes 133 c and 133 d extend in slanteddirections from substantially about the central portion of the firststorage electrode 133 a to the upper and lower ends of the secondstorage electrode 133 b, respectively. The connection portions 133 e areconnected between adjacent storage electrode sets 133 a-133 d. However,various shapes and arrangement may be used for the storage electrodelines 131.

The gate lines 121 and the storage electrode lines 131 may be made of analuminum-based metal such as for example, aluminum (Al) and an aluminumalloy, a silver-based metal such as silver (Ag) and a silver alloy, acopper-based metal such as copper (Cu) and a copper alloy, amolybdenum-based metal such as molybdenum (Mo) and a molybdenum alloy,chromium (Cr), tantalum (Ta) or titanium (Ti). However, the gate lines121 and the storage electrode lines 131 may have a multi-layeredstructure including two conductive layers having different physicalproperties. One of the two conductive layers is made of a metal having alow resistivity, for example, an aluminum based metal, a silver basedmetal, and a copper based metal, to reduce signal delay or voltage dropof the gate lines 121 and the storage electrode lines 131. The otherconductive layers are made of a material having a good contactness toother materials, particularly, ITO (indium tin oxide) and IZO (indiumzinc oxide) such as, for example, a molybdenum based metal, chromium,titanium, and tantalum. An example of a combination in accordance withthe exemplary embodiments is a combination of a lower chromium layer andan upper aluminum layer and a combination of a lower aluminum layer andan upper molybdenum layer. However, the gate lines 121 and the storageelectrode lines 131 may be made of various metals and conductivematerials. Side surfaces of the gate lines 121 and the storage electrodelines 131 are slanted with respect to a surface of the substrate 110,and the slanted angle is in a range of about 30° to about 80°.

A gate insulating layer 140 made of a silicon nitride SiN_(x) or thelike is formed on the gate lines 121 and the storage electrode lines131.

A plurality of semiconductor stripes 151 made of a hydrogenatedamorphous silicon (abbreviated to a-Si) or polysilicon are formed on thegate insulating film 140. The semiconductor stripes 151 mainly extend inthe longitudinal direction and include a plurality of protrusions 154which extend toward the gate electrodes 124. In addition, widths of thesemiconductor stripes 151 are enlarged at regions near the gate lines121 and the storage electrode lines 131 to cover wide areas thereof.

A plurality of line-shaped and island-shaped ohmic contacts 161 and 165are formed on semiconductor stripes 151. The ohmic contacts 161 and 165may be made of made of silicide or an n+ hydrogenated amorphous siliconwhich is heavily doped with n-type impurities such as phosphorus (P).The line-shaped ohmic contacts 161 include a plurality of theprotrusions 163. Each pair of the protrusion 163 and the island-shapedohmic contact 165 is disposed on the protrusion 154 of the semiconductorstripe 151.

Side surfaces of the semiconductor stripes 151 and the ohmic contacts161 and 165 are also slanted with respect to the surface of thesubstrate 100, and the slanted angle is in a range of about 30° to about80°.

A plurality of data lines 171, a plurality of drain electrodes 175, anda plurality of isolated metal pieces 178 are formed on the ohmiccontacts 161 and 165 and the gate insulating film 140.

The data lines 171 transmitting data signals mainly extend in thelongitudinal direction to intersect the gate lines 121 and the stemlines and the connection portions 133 e of the storage electrode lines131. The data lines 171 include a plurality of C-shaped sourceelectrodes 173 which protrude toward the gate electrodes 124 and endportions 179 which have wide areas for connection to other layers orexternal driver circuits. A data driver circuit which generates the datasignals may be mounted on a flexible printed circuit film attached onthe substrate 110. Alternatively, the data driver circuit may bedirectly mounted on the substrate 110. Otherwise, the data drivercircuit may be integrated in the substrate 110. In the case where thedata driver circuit is integrated in the substrate 110, the data lines171 are extended to be directly connected to the data driver circuit.

The drain electrode 175 is separated from the data line 171 and faces asource electrode 173 with the gate electrode 124 interposedtherebetween. Each of the drain electrodes 175 has a wide end portionand a bar-shaped end portion. The bar-shaped end portion is surroundedby the source electrode 173.

One gate electrode 124, one source electrode, and one drain electrode175 together with one protrusion 154 of one semiconductor stripeconstitute one thin film transistor Q1. The channel of the thin filmtransistor is formed in the protrusion 154 between the source electrode173 and the drain electrode 175.

The isolated metal piece 178 is disposed on the gate line 121 at aregion near the first storage electrode 133 a.

Also, the data lines 171 and the drain electrodes 175 may be made of,for example, molybdenum (Mo), a refractory metal such as chromium (Cr),tantalum (Ta), and titanium (Ti), or an alloy thereof. The data lines171 and the drain electrodes 175 may have a multi-layered structureincluding a refectory metal layer and a low-resistivity conductivelayer. An example of the multi-layered structure is a two-layeredstructure of a lower chromium or molybdenum (alloy) layer and an upperaluminum (alloy) layer and a three-layered structure of a lowermolybdenum (alloy) layer/an intermediate aluminum (alloy) layer/an uppermolybdenum (alloy) layer. However, instead of the aforementionedmaterials, the data lines 171, the drain electrodes 175, and the metalpieces 178 may also be made of various other metals or conductivematerials.

The side surfaces of the data lines 171, the drain electrodes 175, andthe metal pieces 178 are also slanted with respect to the surface of thesubstrate 110 at an angle ranging from about 30° to about 80°.

The ohmic contacts 161 and 165 are interposed only between theunderlying semiconductor stripes 151 and the overlying data lines 171and the drain electrodes 175 and reduce contact resistance therebetween.Although the widths of the semiconductor stripes 151 are smaller thanthose of the data lines 171 in most regions, the widths of the portionswhere the gate lines 121 and the storage electrode lines 121 intersecteach other are enlarged as described above. Therefore, the profile ofsurfaces at the intersections is smoothed, so that the disconnection ofthe data lines 171 can be prevented. The semiconductor stripes 151 haveexposed portions uncovered by the data lines 171 and the drainelectrodes 175 such as portions disposed between the source electrodes173 and the drain electrodes 175.

A protective layer (passivation layer) 180 is formed on the data line171, the drain electrode 175, the metal pieces 178, and the exposedportions of the semiconductor stripes 151. The protective layer 180 ismade of an inorganic insulating material or an organic insulatingmaterial, and a surface thereof may be planarized. Examples of theinorganic insulating material are silicon nitride and silicon oxide. Theorganic insulating material may be photosensitive, and a dielectricconstant thereof is preferably about 4.0 or less. Alternatively, theprotective layer 180 may have a double-layer structure of a lowerinorganic layer and an upper organic layer to maintain desiredinsulating properties for the organic layer and protect the exposedportions of the semiconductor stripes 151.

A plurality of contact holes 182 and 185 which expose end portions ofthe data lines 171 and the drain electrodes 175, respectively, areformed on the protective layer 180. A plurality of contact holes 181which expose end portions of the gate lines 121, a plurality of contactholes 183 a which expose the protrusions of the free ends of the firststorage electrodes 133 a, and a plurality of contact holes 183 b whichexpose portions of the storage electrode lines at regions near the fixedends of the first storage electrodes 133 a are formed on the protectivelayer 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191, a plurality of overpasses 83, and aplurality of contact assistants 81 and 82 are formed on the protectivelayer 180. The components may be made of, for example, a transparentconducive material such as ITO and IZO or a reflective metal such asaluminum (Al), silver (Ag), chromium (Cr), and an alloy thereof

The pixel electrode 191 is physically and electrically connected to thedrain electrode 175 through the contact hole 185 and receives a datavoltage applied by the drain electrode 175. The pixel electrode 191applied with the data voltage together with a common electrode 270 whichis disposed in the common electrode panel 200 and applied with a commonvoltage generates an electric field. The electric field determinesalignment of liquid crystal molecules 31 in the liquid crystal layer 31between the two electrodes 191 and 270.

According to the determined alignment of the liquid crystal molecules31, polarization of the light passing through the liquid crystal layer 3changes. The pixel electrode 191 and the common electrode 270constitutes a capacitor (hereinafter, referred to as a liquid crystalcapacitor) which sustains the applied voltage after the thin filmtransistor turns off

The pixel electrodes 191 overlap the storage electrodes 133 a to 133 dand the storage electrode lines 131. The capacitors constructed byoverlapping the pixel electrodes 191 and the drain electrodeselectrically connected thereto with the storage electrode lines 131 arecalled storage capacitors. The storage capacitors increase the voltagestorage capacity of the liquid crystal capacitors.

A central cutout portion 91, a lower cutout portion 92 a, and an uppercutout portion 92 b are formed on the pixel electrode 191. Therefore,the pixel electrode 191 is divided into a plurality of partitions by thecutout portions 91, 91 a, and 91 b. The cutout portions 91, 92 a, and 92b have an inversion symmetry with respect to a virtual transversecentral line bisecting the pixel electrode 191.

The lower and upper cutout portions 92 a and 92 b extend substantiallyin the slanted directions from the right side to the left side of thepixel electrode 191 and overlap the fourth and third storage electrodes133 d and 133 c, respectively. The lower and upper cutout portions 92 aand 92 b are disposed in lower and upper half regions of the pixelelectrode 191 with respect to a transverse central line thereof. Thelower and upper cutout portions 92 a and 92 b extend in perpendicular toeach other with slanted angles of about 45° with respect to the gateline 121.

The central cutout portion 91 extends along the transverse central lineof the pixel electrode 191 and has an inlet at the right side of thepixel electrode. The inlet of the central cutout portion 91 has a pairof upper and lower slanted edges which are substantially parallel to thelower and upper cutout portions 92 a and 92 b, respectively.

Therefore, the lower half region of the pixel electrode 191 is dividedinto two partitions by the lower cutout portion 92 a, and the upper halfregion of the pixel electrode 191 is divided into two partitions by theupper cutout portion 92 b.

Referring to FIG. 5, the pixel electrode 191 has a pair of first primaryedges 193 and 194 facing each other and a pair of second primary edges195 and 196 connected to the first primary edges 193 and 194. The firstprimary edges 193 and 194 are substantially parallel to the gate line121, and the second primary edges 195 and 196 have inner and outerenvelopes 951, 961, 952, and 962. The inner and outer envelopes 951,961, 952, and 962 of the second primary edges 195 and 196 aresubstantially perpendicular to the first primary edges 193 and 194. Leftcorners of the pixel electrode 191 is constructed with chamfered slantededges 193 c and 194 c, and the chamfered slanted edges 193 c and 194 chave a slanted angle of about 45° with respect to the gate line 121.

The second primary edges 195 and 196 of the pixel electrode 191 have aplurality of sawteeth 910 and 920 which protrude from a plurality oflongitudinal lines 915 and 916 on the inner envelopes 951 and 961outwardly. The sawteeth 910 and 920 are symmetrical with respect to thetransverse central line of the pixel electrode 191.

Each of the sawteeth 910 (920) has a first slanted edge 911 (921), asecond slanted edge 912 (922), and a top edge 913 (923) which isdisposed on the outer envelop 952 (962) to connect the first and secondslanted edges. The first slanted edge 911 (912) has an obtuse angle ofabout 135° or more with respect to the longitudinal line 915 (925), andthe second edge 912 (922) has an angle of about 45° with respect to thelongitudinal line 915 (925). The extension lines of the first and secondslanted edges 911 (912) and 912 (922) intersect each other with an acuteangle of about 45° or less. In addition, the second edges 912 and 922are substantially parallel to the lower and upper cutout portions 92 aand 92 b and located on the extension lines of the cutout portions 92 aand 92 b, respectively. The first edges 911 and 921 have an angle ofabout 45° or less or about 135° or more with respect to the lower andupper cutout portions 92 a and 92 b.

The upper portions of the sawteeth 910 and 920, that is, portions nearthe top edges 913 and 923 thereof overlap the data line 171. Thesawteeth 920 of the right edge 196 of the pixel electrode 191 which arelocated at the left of the data line 171 are engaged with the sawteeth910 of the pixel electrode 191 which are located at the left of the dataline 171. In addition, the facing edges of the engaged sawteeth 910 and920 are parallel to each other.

The number of the sawteeth 910 and 920 are in close relation to thenumber of the partitions of the pixel electrode 191 divided by thecutout portions 91, 92 a, and 92 b or the number of the cutout portions91, 92 a, and 92 b. The number of the partitions of the pixel electrode191 and the number of the sawteeth 910 and 920 may vary according todesign factors such as a size of the pixel electrode 191, the ratio oflengths of the transverse and longitudinal sides of the pixel electrode191, and the types or characteristics of the liquid crystal layer 3.

The overpass 83 is disposed across the gate line 121 and connected tothe exposed portion of the storage electrode line 131 and the exposedend portion of the free end of the first storage electrode 133 a throughthe contact holes 183 b and 18 b which are located at the oppositepositions with respect to the gate line 121, respectively. The storageelectrodes 133 a and 133 b and the storage electrode line 131 togetherwith the overpasses 83 may be used to repair defects of the gate lines121, the data lines 171, and the thin film transistors.

The contact assistants 81 and 82 are connected to the end portion 129 ofthe gate line 121 and the end portion 179 of the data line 171 throughthe contact holes 181 and 182, respectively. The contact assistants 81and 82 compensate for the adhesiveness of the end portions 129 of thegate line 121 and the end portions 179 of the data lines 171 to externalapparatuses and also protect these portions.

Now, the common electrode panel 200 will be described with respect toFIGS. 1, 3, and 4.

A light blocking member 220 is formed on the insulating substrate 210made of a transparent glass or a plastic material. The light blockingmember 220 is called a black matrix and prevents light leakage betweenthe pixel electrodes 191. The light-blocking member 220 includes aplurality of opening portions 225 which face the pixel electrodes 191and have a shape of a substantial rectangle. A width W of portions 221of the light blocking member 220 corresponding to the date lines 171 issubstantially the same as that of the data lines 171. However, thewidths may be defined by taking into consideration alignment error ofthe panels 100 and 200. The light blocking member 220 includes enlargedportions 222 which block spaces between the engaged sawteeth 910 and 920which protrude outwardly from the data lines 171. The light blockingmember 220 may include portions corresponding to the thin filmtransistors.

A plurality of color filters 230 are formed on the substrate 210. Mostportions of the color filters 230 are disposed in regions surrounded bythe light-blocking member 220. Moreover, the color filters 230 extendalong rows of the pixel electrodes 191 in the longitudinal direction.Each of the color filters 230 can display one of primary colors such asred, green, and blue.

A cover film 250 is formed on the color filters 230 and thelight-blocking member 220. The cover film 250 may be made of an(organic) insulating material. The cover film 250 prevents the colorfilters 230 from being exposed and provides a planarized surface. Thecover film 250 may be omitted.

A common electrode 270 is formed on the cover film 250. The commonelectrode 270 is made of a transparent conductive material such as ITOand IZO. A plurality of cutout portion sets of cutout portions 71, 72 a,and 72 b are formed on the common electrode 270.

One cutout portion set 71-72 b faces one pixel electrode 191 andincludes a central cutout portion 71, a lower cutout portion 72 a, andan upper cutout portion 72 b. The cutout portions 71, 72 a, and 72 b aredisposed between the adjacent cutout portions 91, 92 a, and 92 b of thepixel electrode 191 or between the cutout portions 92 a and 92 b and thechamfered edge of the pixel electrode 191.

In addition, each of the cutout portions 71, 72 a, and 72 b extendssubstantially in parallel to the lower or upper cutout portion 92 a or92 b of the pixel electrode 191 and include at least one slantedportion. Each of the slanted portions includes at least one recessednotch 7. The cutout portions 71, 72 a, and 72 b have an inversion typeof symmetry with respect to the transverse central line of the pixelelectrode 191.

Each of the lower and upper cutout portions 72 a and 72 b includes aslanted portion and a transverse portion. The slanted portion extendssubstantially from the upper or lower side to the left side of the pixelelectrode 191 to overlap the longitudinal side of the pixel electrode191. A long side facing the slanted portion intersects the first andsecond slanted edges 911, 912, 921, and 922 of the protrusions of thepixel electrode 191 or extension lines thereof or is located on theextension lines. The transverse portion extends from the end of theslanted portion along the transverse side of the pixel electrode 191with an obtuse angle with respect to the slanted portion and overlapsthe transverse side.

The central cutout portion 71 includes a central transverse portion anda pair of slanted portions. The central transverse portion extendssubstantially from the left side of the pixel electrode 191 along thetransverse central line of the pixel electrode 191 in the rightdirection. A pair of the slanted portions extend substantially inparallel to the lower and upper cutout portions 72 a and 72 b from theend of the central transverse portion to the right side of the pixelelectrode 191 with an obtuse angle with respect to the centraltransverse portion, respectively.

The number of the cutout portions 71, 72 a, and 72 b may vary accordingto the design factors, and the light-blocking member 220 overlaps thecutout portions 71, 72 a, and 72 b to prevent the light leakage in thevicinity of the cutout portions 71, 72 a, and 72 b. Spacers 320 made ofan insulating material are disposed on the common electrode panel 200 tomaintain a constant interval between the panels 100 and 200.

Alignment films 11 and 21 are coated on inner surfaces of the panels 100and 200, respectively. The alignment films 11 and 21 may be avertically-aligned film. Polarizers 12 and 22 are disposed on outersurfaces of the panels 100 and 200, respectively. The transmission axesof the polarizers 12 and 22 are perpendicular to each other and, have anangle, for example of about 45° with respect to the slanted cutoutportions 92 a and 92 b and the slanted portions of the cutout portions71, 72 a, and 72 b. In the case of a reflective liquid crystal displayapparatus, one of the two polarizers 12 and 22 may be omitted.

The liquid crystal display apparatus according to the present exemplaryembodiment may further include a phase retardation film for compensatingfor the retardation of the liquid crystal layer 3. In addition, theliquid crystal display apparatus may include a backlight unit forsupplying light to the polarizers 12 and 22, the phase retardation film,the panels 100 and 200, and the liquid crystal layer 3.

The liquid crystal layer 3 has a negative anisotropic permittivity, andthe liquid crystal molecules 31 of the liquid crystal layer 3 arealigned so that the major axes thereof are perpendicular to the surfacesof the two panels 100 and 200 when no electric field is applied to theliquid crystal molecules. Consequently, incident light cannot passthrough the perpendicular polarizers 12 and 22 so as to be blocked.

When the common voltage and the data voltage are applied to the commonelectrode 270 and the pixel electrode 191, respectively, a primaryelectric field is generated in a direction substantially perpendicularto the surfaces of the panels 100 and 200. Hereinafter, the pixelelectrode 191 and the common electrodes 270 may be collectively referredto as electric field generating electrodes. In response to the electricfield, the liquid crystal molecules 31 have a tendency to change themajor axis direction to be perpendicular to the direction of theelectric field.

Referring to FIGS. 1 and 5, one cutout portion set 71-72 b, 91-92 bdivides the pixel electrode 191 into a plurality of sub areas. Each ofthe sub areas has two primary edges which are slanted with respect tothe first primary edges 193 and 194 of the pixel electrode 191 andsecondary edges which are some portions of the edges 193 to 196 of thepixel electrode 191. One of the primary edges of each sub area isconstructed by combining one edge of the cutout portions 91, 92 a, and92 b of the pixel electrode 191 with the secondary edges 912 and 922 ofthe sawteeth 910 and 920 or constructed with the chamfered slanted edges193 c and 194 c. The other of the primary edges is constructed with asingle edge of the slanted portion of the cutout portions 71, 72 a, and72 b of the common electrode 270 or constructed by combining the slantedportions of the cutout portions 71, 72 a, and 72 b with the slantededges 912 and 922 of the sawteeth 910 and 920. Therefore, the lengths ofthe primary edges of the sub areas are different from each other, andthe adjacent primary edges of the adjacent sub areas are disposed todeviate from each other. One of the secondary edges of the sub areas isthe first slanted edge 911 (921) of each of the sawteeth 910 (920) ofthe pixel electrode 191 and has an angle of about 135° or more withrespect to the primary edges. The primary edges have an angle of about45° with respect to the polarization axes of the polarizers 12 and 22 tomaximize light efficiency.

The primary edges are longer than the secondary edges, and at least oneof the secondary edges has an angle of about 135° or more wither respectto the primary edges. Therefore, in the primary electric field on thesub areas, the horizontal component thereof perpendicular to the primaryedges is much larger than the horizontal component thereof parallel tothe primary edges. As a result, most of the liquid crystal molecules 31on the sub areas are tilted in the directions perpendicular to theprimary edges.

Since most of the liquid crystal molecules 31 on the sub areas aretilted in the directions perpendicular to the primary edges, the tilteddirections may roughly include four directions. Moreover, since theliquid crystal molecules 31 can be adjusted to have various tiltedangles, it is possible to increase the reference viewing angle of theliquid crystal display apparatus.

As shown in FIG. 6, secondary electric fields (lateral fields) E1 and E2are additionally generated from the difference between voltages of thepixel electrodes 191. Directions of the secondary electric fields E1 andE2 are mainly perpendicular to one of the secondary edges of the subareas, that is, the first slanted edge 911 (921) of the sawteeth 910(920). Therefore, the directions of the secondary electric fields E1 andE2 have an angle of about 5° or less with respect to the direction ofthe horizontal component of the primary electric field. As a result, thesecondary electric fields E1 and E2 between the pixel electrodes 191have a tendency to fix the tilted directions of the liquid crystalmolecules 31.

By providing the sawteeth 910 and 920 having the slanted edges 911 and922 having an angle of about 135° or more with respect to the cutoutportions 91, 92 a, 92 b, 71, 72 a, and 72 b to the transverse sides ofthe pixel electrode 191, the direction of the horizontal component ofthe primary electric field and the secondary electric field in thevicinities of the longitudinal sides 195 and 196 of the pixel electrode191 are allowed to be substantially equal to the direction of thehorizontal component of the primary electric field in the vicinities ofthe sub areas. Also, by shortening the distance between the pixelelectrodes 191, the strength of the secondary electric field is allowedto increase. As a result, the tilted direction of the liquid crystalmolecules 31 located in the vicinities of the sawteeth 910 and 920 ofthe pixel electrode 191 are allowed to be substantially equal to thetilted direction of the liquid crystal molecules 31 located at thecenters of the sub areas, so that the vicinities of the sawteeth 910 and920 can be used as an effective display region.

The addition of the sawteeth 910 and 920, in the exemplary embodimentsof the present invention provides increased transmittance for the liquidcrystal display apparatus. In addition, since with the exemplaryembodiments of the present invention it is not necessary to provide theportions overlapping the longitudinal sides of the pixel electrode 191to the cutout portions 71, 72 a, and 72 b of the common electrode 270,the aperture ratio of the liquid crystal display apparatus can therebyalso be increased.

Further, with the exemplary embodiment of the present invention, thethird and fourth storage electrodes 133 c and 133 d extending in theslanted directions serve as control electrodes for controlling theliquid crystal molecules located the aforementioned portions, so thattexture which may occur at the central portions of the slanted cutoutportions 92 a and 92 b can be reduced.

The widths of the cutout portions 71, 72 a, 72 b, 91, 92 a, and 92 b maybe in a range of, for example, from about 9 μm to about 12 μm.

The notches of the cutout portions 71, 72 a, and 72 b of the commonelectrode 270 control the tilted direction of the liquid crystalmolecules 31 located above the cutout portions 71, 72 a, and 72 b. Suchnotches 7 may be formed in the cutout portions 91, 92 a, and 92 b of thepixel electrode 191.

The shapes and arrangements of the cutout portions 71, 72 a, 72 b, 91,92 a, and 92 b and the notches thereof may be modified in variousmanners.

At least one of the cutout portions 71, 72 a, 72 b, 91, 92 a, and 92 bmay be replaced with a protrusion or a depression. The protrusions maybe made of an organic or inorganic material and disposed above or underthe electric field generating electrodes 191 and 270. Now, a liquidcrystal display apparatus according to another exemplary embodiment ofthe present invention will be described in detail with reference toFIGS. 7 to 10.

FIG. 7 is a view showing a layout of a liquid crystal display apparatusaccording to another exemplary embodiment of the present invention. FIG.8 is a view showing a layout of a thin film transistor panel for theliquid crystal display apparatus of FIG. 7. FIG. 9 is a view showing alayout of a common electrode panel for the liquid crystal displayapparatus of FIG. 7. FIG. 10 is a cross sectional view showing theliquid crystal display apparatus taken along line X-X of FIG. 7.

Referring to FIGS. 7 to 10, the liquid crystal display apparatusincludes a thin film transistor panel 100 and a common electrode panel200 which face each other and a liquid crystal layer 300 interposedbetween the panels 100 and 200.

Firstly, the thin film transistor panel 100 will be described in detailwith reference to FIGS. 7, 8, and 10.

A plurality of gate lines 121 and a plurality of storage electrode lines131 are disposed on an insulating substrate 110 made of a transparentglass or a plastic material.

The gate lines 121 transmitting gate signals mainly extend in thetransverse direction. The gate lines 121 include a plurality of gateelectrodes 124 which protrude upwardly and end portions 129 which havewide areas for connection to other layers or external driver circuits.The storage electrode lines 131 which are applied with predeterminedvoltages extend substantially parallel to the gate lines 121. Each ofthe storage electrode lines 131 is disposed between adjacent two gatelines 121 and separated by substantially the same distance from the twogate lines 121. The storage electrode lines 131 include storageelectrodes 137 which are enlarged upwardly and downwardly. However,various shapes and arrangement may be used for the storage electrodelines 131.

Side surfaces of the gate lines 121 and the storage electrode lines 131are slanted with respect to a surface of the substrate 110, at an anglein the range of about 30° to about 80°.

A gate insulating layer 140 made of a silicon nitride SiN_(x) or thelike is formed on the gate lines 121 and the storage electrode lines131.

A plurality of island-shaped semiconductor members 154 made of ahydrogenated amorphous silicon or polysilicon are formed on the gateinsulating film 140. The semiconductor members 154 are disposed on thegate electrodes 124 and include expansion portions covering boundariesof the gate lines 121. A plurality of island-shaped ohmic contacts 163and 165 are formed on semiconductor members 154. The ohmic contacts 163and 165 may be made of made of silicide or an n+ hydrogenated amorphoussilicon which is heavily doped with n-type impurities such as phosphorus(P). A pair of the ohmic contacts 163 and 165 are disposed on thesemiconductor member 154.

Side surfaces of the semiconductor members 154 and the ohmic contacts163 and 165 are also slanted with respect to the surface of thesubstrate 100, and the slanted angle is in a range of about 30° to about80°.

A plurality of data lines 171 and a plurality of drain electrodes 175are formed on the ohmic contacts 163 and 165 and the gate insulatingfilm 140.

The data lines 171 transmitting data signals mainly extend in thelongitudinal direction to intersect the gate lines 121 and the storageelectrode lines 131. The data lines 171 include a plurality of sourceelectrodes 173 which protrude toward the gate electrodes 124 and endportions 179 which have wide areas for connection to other layers orexternal driver circuits. The drain electrode 175 is separated from thedata line 171 and faces a source electrode 173 with respect to the gateelectrode 124 interposed therebetween. Each of the drain electrodes 175has a wide end portion and a bar-shaped end portion. The bar-shaped endportion is partially surrounded by the U-shaped source electrode 173.

For example, side surfaces of the data lines 171 and the drainelectrodes 175 may also be slanted with respect to the surface of thesubstrate 110 at an angle ranging from about 30° to about 80°.

The ohmic contacts 163 and 165 are interposed only between theunderlying semiconductor members 154 and the overlying data lines 171and the drain electrodes 175 and reduce contact resistance therebetween.

A protective layer (passivation layer) 180 is formed on the data line171, the drain electrode 175, and the exposed portions of thesemiconductor members 154. The protective layer 180 is made of aninorganic insulating material or an organic insulating material, and asurface thereof may be planarized.

A plurality of contact holes 182 and 185 which expose end portions ofthe data lines 171 and the drain electrodes 175, respectively, areformed on the protective layer 180. A plurality of contact holes 181which expose end portions 129 of the gate lines 121 are formed on theprotective layer 180 and the gate insulating layer 140.

A plurality of pixel electrodes 191 and a plurality of contactassistants 81 and 82 are formed on the protective layer 180. Thecomponents may be made of a transparent conducive material such as, forexample, ITO and IZO or a reflective metal such as, for example,aluminum (Al), silver (Ag), chromium (Cr), and an alloy thereof.

The pixel electrode 191 is physically and electrically connected to thedrain electrode 175 through the contact hole 185 and receives a datavoltage applied by the drain electrode 175. The pixel electrodes 191overlap the storage electrodes 137 and the storage electrode lines 131.

The pixel electrode 191 has a pair of first primary edges 193 and 194facing each other and second primary edges which are connected to thefirst primary edges 193 and 194 and include a plurality of sawteeth 90and lower edges 90 c connecting the sawteeth 90. Each of the sawteeth 90includes first and second slanted edges 90 a and 90 d which are slantedwith respect to the first primary edges 193 and 194 and an upper edge 90b. The first primary edges 193 and 194 are parallel to the gate lines121. The first primary edges 193 and 194 and the second primary edgesconstitute an approximate rectangle. The pixel electrode 191 has thefour chamfered corners which has an angle of about 45° with respect tothe gate lines 121.

The first slanted edge 90 a partially overlaps the data line 171. Thefirst slanted edges 90 a of the adjacent two pixel electrodes 191 aredisposed to face each other in parallel to each other.

First and second central cutout portions 91 and 92, lower slanted cutoutportions 93 a, 94 a, and 95 a, and upper slanted cutout portions 93 b,94 b, and 95 b are formed on the pixel electrode 191. Therefore, thepixel electrode 191 is divided into a plurality of sub areas by thecutout portions 91 to 95 b. The cutout portions 91 to 95 b have aninversion symmetry with respect to the storage electrode line 131. Thelower slanted cutout portions 93 a, 94 a, and 95 a and the upper slantedcutout portions 93 b, 94 b, and 95 b extend substantially in the slanteddirections from the right side to the left, upper, or lower side of thepixel electrode 191. The lower slanted cutout portions 93 a, 94 a, and95 a and the upper slanted cutout portions 93 b, 94 b, and 95 b aredisposed in lower and upper half regions of the pixel electrode 191 withrespect to the storage electrode line 131.

The lower slanted cutout portions 93 a, 94 a, and 95 a and the upperslanted cutout portions 93 b, 94 b, and 95 b extend in perpendicular toeach other with slanted angles of about 45° with respect to the gateline 121. Each of the lower slanted cutout portions 93 a, 94 a, and 95 aand the upper slanted cutout portions 93 b, 94 b, and 95 b has an inletat the right or left side of the pixel electrode 191. The inlets may beconnected to the concave portions 90 c.

The first slanted edges 90 a of the sawteeth 90 of the second primaryedges have an obtuse angle with respect to the slanted cutout portions93 a to 95 a and 93 b to 95 b, and the second slanted edges 90 d thereofare substantially parallel to the slanted cutout portions 93 a to 95 aand 93 b to 95 b.

The first central cutout portion 91 extends along the storage electrodeline 131 and has an inlet toward the left side of the pixel electrode191. The second central cutout portion 92 has a shape of polygon ofwhich upper and lower corners protrude toward the left sides of thepixel electrode 191.

As a result, the lower half region of the pixel electrode 191 is dividedinto four partitions by the lower slanted cutout portions 93 a, 94 a,and 95 a, and the upper half region thereof is also divided into fourpartitions by the upper slanted cutout portions 93 b, 94 b, and 95 b.

The number of the partitions and the number of the cutout portions mayvary according to design factors such as a size of the pixel electrode191, a ratio of lengths of the transverse and longitudinal sides of thepixel electrode 191, and types or characteristics of the liquid crystallayer 3.

The contact assistants 81 and 82 are connected to the end portion 129 ofthe gate line 121 and the end portion 179 of the data line 171 throughthe contact holes 181 and 182, respectively.

Now, the common electrode panel 200 will be described with respect toFIGS. 7, 9, and 10.

A light blocking member 220 is formed on the insulating substrate 210made of a transparent glass or a plastic material. The light blockingmember 220 include line-shaped portions 221 corresponding to the datalines 171, enlarged portions 222 formed by enlarging some portions ofthe light blocking member 220, and plane-shaped portions 223corresponding to the thin film transistors. The light blocking member220 prevents light leakage between the pixel electrodes 191 and definingopening regions facing the pixel electrodes. However, the light blockingmember 220 may further include a plurality of opening portions facingthe pixel electrodes 191 and having substantially the same shape as thepixel electrodes 191.

A plurality of color filters 230 are formed on the substrate 210. Mostportions of the color filters 230 are disposed in regions surrounded bythe light-blocking member 220. In addition, the color filters 230 extendalong rows of the pixel electrodes 191 in the longitudinal direction.Each of the color filters 230 can display one of primary colors such asred, green, and blue.

A cover film 250 is formed on the color filters 230 and thelight-blocking member 220. The cover film 250 may be made of an(organic) insulating material. The cover film 250 prevents the colorfilters 230 from being exposed and provides a planarized surface. Thecover film 250 may be omitted.

A common electrode 270 is formed on the cover film 250. The commonelectrode 270 is made of a transparent conductive material such as ITOand IZO.

A plurality of cutout portions 71, 72 a, 72 b, 73 a, 73 b, 74 a, 74 b,and 75 are formed on the common electrode 270.

One cutout portion set 71-75 faces one pixel electrode 191 and includesa central cutout portion 71, first to third lower slanted cutoutportions 72 a, 73 a, and 74 a, first to third upper slanted cutoutportions 72 b, 73 b, and 74 b, and a connection portions 75. The cutoutportions 71, 72 a, 72 b, 73 a, 73 b, 74 a, and 74 b are disposed betweenthe adjacent cutout portions 91, 92, 93 a, 93 b, 94 a, 94 b, 95 a, and95 b of the pixel electrode 191 or between the cutout portions 91, 92,93 a, 93 b, 94 a, 94 b, 95 a, and 95 and the chamfered edge of the pixelelectrode 191. In addition, each of the cutout portions 71, 72 a, 72 b,73 a, 73 b, 74 a, and 74 b extends substantially in parallel to thelower cutout portions 93 a, 94 a, and 95 a or upper cutout portions 93b, 94 b, and 95 b of the pixel electrode 191 and include at least oneslanted portion.

The first lower and upper slanted cutout portions 72 a and 72 b extendsubstantially from the right side to the left side of the pixelelectrode 191. The second lower and upper slanted cutout portions 73 aand 73 b extend substantially from the right side to the upper and lowerleft corners of the pixel electrode 191, respectively. The third lowerand upper slanted cutout portions 74 a and 74 b extend substantiallyfrom the right side to the lower and upper sides of the pixel electrode191, respectively. The third lower and upper slanted cutout portions 74a and 74 b include terminated transverse portions which extend from theends of the third lower and upper slanted cutout portions 74 a and 74 bto overlap the lower and upper sides of the pixel electrode 191. Theterminated transverse portions have an obtuse angle with respect to theslanted cutout portions 74 a and 74 b.

The central cutout portion 71 includes a central transverse portion anda pair of slanted portions. The central transverse portion extendssubstantially from the right side of the pixel electrode 191 along thestorage electrode line 131 in the left direction. A pair of the slantedportions extend substantially in parallel to the lower and upper cutoutportions 72 a, 72 b, 73 a, 73 b, 74 a, and 74 b from the end of thecentral transverse portion to the left side of the pixel electrode 191.

One end of the one slanted portion of the central cutout portion 71 andone end of the second lower cutout portion 73 a of the adjacent pixelelectrode are connected with one of the connection portions 75.Additionally, one end of the other slanted portion of the central cutoutportion 71 and one end of the second upper cutout portion 73 b of theadjacent pixel electrode are connected with one of the connectionportions 75. Also, one end of the first lower slanted cutout portion 72a and one end of the third lower slanted cutout portion 74 a of theadjacent pixel electrode are connected with one of the connectionportions 75. Moreover, one end of the first upper slanted cutout portion72 b and one end of the third upper slanted cutout portion 74 b of theadjacent pixel electrode are connected with one of the connectionportions 75. The connection portions 75 are parallel to the firstslanted edges 90 a of the pixel electrode 191 and located at portionscorresponding to the data line 171. A width of the connection portions75 is larger by about 8 μm than an interval between the adjacent pixels191. The enlarged portions 222 of the light blocking member 220 may havea width larger than the other portions corresponding to the connectionportions 75.

Thus, by providing the sawteeth to the side of the pixel electrode 191adjacent to the data line 171, as described above in the exemplaryembodiment shown in FIGS. 1 to 4, the secondary electric field generatedbetween the adjacent pixel electrodes 191 can control the alignment ofthe liquid crystal molecules 31 in the sub areas. In addition, byproviding the connection portions 75 at the positions corresponding tothe regions where the first slanted edges 90 a of the adjacent two pixelelectrodes 191 face each other, the alignment of the liquid crystalmolecules 31 in the sub areas can be controlled as well.

Such effects will be described with reference to FIGS. 11 and 12.

FIG. 11 is a cross sectional view taken along line XI-XI of FIG. 6. FIG.12 is a cross sectional view taken along line XII-XII of FIG. 7.

Referring to FIG. 11, the electric field generated between the pixelelectrodes 191 and the common electrode 270 includes the secondaryelectric field having a field direction for interfering with the uniformalignment of the liquid crystal molecule in the sub areas at theboundaries of the adjacent pixel electrodes 191. Therefore, in the subareas, the liquid crystal molecules collide with each other, so that thealignment of the liquid crystal molecules may be disturbed.

However, according to the exemplary embodiment of the present invention,since the connection portions 75 are provided at the positionscorresponding to the regions where the first slanted edges 90 a of theadjacent two pixel electrodes 191 face each other, the direction of theelectric field generated between the common electrode 280 and the pixelelectrodes 191 changes due to the connection portions of the commonelectrode 270 as shown in FIG. 12. As a result, the secondary electricfield is generated in such a direction that the uniform alignment of theliquid crystal molecules 31 in the sub areas can be controlled.Accordingly, unlike FIG. 11, the liquid crystal molecules cannot collidewith each other, so that texture can be reduced.

Furthermore, according to the exemplary embodiment of the presentinvention, a plurality of convex notches 7 which are periodicallydisposed with a predetermined interval may be provided in the cutoutportions 71 to 74 b.

The number and directions of the cutout portion 71 to 75 may varyaccording to design factors.

Alignment films 11 and 21 are coated on inner surfaces of the panels 100and 200, respectively. The alignment films 11 and 21 may be avertically-aligned film. Polarizers are disposed on outer surfaces ofthe panels 100 and 200, respectively. The transmission axes of thepolarizers are perpendicular to each other, and one of the transmissionaxes is preferably parallel to the gate lines 121. In the case of areflective liquid crystal display apparatus, one of the two polarizersmay be omitted.

The liquid crystal display apparatus may include a backlight unit forsupplying light to the polarizers, the panels 100 and 200, and theliquid crystal layer 3.

The liquid crystal layer 3 has a negative anisotropic permittivity, andthe liquid crystal molecules 31 of the liquid crystal layer 3 arealigned so that major axes thereof are perpendicular to the surfaces ofthe two panels 100 and 200 when no electric field is applied to theliquid crystal molecules. Therefore, incident light cannot pass throughthe perpendicular polarizers so as to be blocked.

The above-described exemplary embodiments may be applied to thelater-described exemplary embodiments.

Now, a liquid crystal display apparatus according to another exemplaryembodiment of the present invention will be described in detail withreference to FIGS. 13 and 14.

FIG. 13 is a view showing a layout of a liquid crystal display apparatusaccording to another exemplary embodiment of the present invention. FIG.14 is a cross sectional view showing the liquid crystal displayapparatus taken along line XIV-XIV of FIG. 13.

As shown in FIGS. 13 and 14, the liquid crystal display apparatusincludes a thin film transistor panel 100 and a common electrode panel200 which face each other, a liquid crystal layer 300 interposed betweenthe panels 100 and 200, and a pair of polarizers 12 and 22 disposed onouter surfaces of the panels 100 and 200.

The layered structures of the panels 100 and 200 according to thepresent exemplary embodiment are substantially the same as the layeredstructures of FIGS. 1 to 4.

In the thin film transistor panel 100, a plurality of gate lines 121 anda plurality of storage electrode lines 131 are disposed on a substrate110. The gate lines 121 include a plurality of gate electrodes 124 andend portions 129. The storage electrode lines 131 include a plurality ofstorage electrodes 133 a to 133 d and a plurality of connection portions133 e. A gate insulating layer 140, a plurality of semiconductor stripes151 including protrusions 154, a plurality of line-shaped ohmic contacts161 including protrusions 163, and a plurality of island-shaped ohmiccontacts 165 are sequentially formed on the gate lines 121 and thestorage electrode lines 131.

A plurality of data lines 171 including source electrodes 173 and endportions 179, a plurality of drain electrodes 175, and a plurality ofisolated metal pieces 178 are formed on the ohmic contacts 161 and 165,and a protective layer 180 is formed thereon. A plurality of contactholes 181, 182, 183 a, 183 b, and 185 are formed on the protective layer180 and the gate insulating layer 140. A plurality of pixel electrodes191 including cutout portions 91 to 92 b, a plurality of overpasses 83,and a plurality of contact assistants 81 and 82 are formed on theprotective layer 180, and an alignment layer 11 is formed thereon.

In the common electrode panel 200, a light blocking member 220, aplurality of color filters 230, a cover film 250, a common electrodeincluding cutout portions 71 to 72 b, and an alignment layer 21 areformed on an insulating substrate 210.

Unlike the liquid crystal display apparatus shown in FIGS. 1 to 4, thesemiconductor stripes 151 have planar shapes which are substantiallyequal to shapes of the data lines 171, the drain electrodes 175, and theunderlying ohmic contacts 161 and 165. The semiconductor stripes 151have exposed portions which do not cover regions between the sourceelectrodes 173 and the drain electrodes 175, the data line 171, and thedrain electrodes 175.

In addition, ohmic contacts having planar shapes which are substantiallyequal to those of the isolated metal pieces 178 and island-shapedsemiconductor members are formed under the isolated metal pieces 178.

In the fabrication of the thin film transistor panel 100, the data lines171, the drain electrodes 175, the metal pieces 178, the semiconductorstripes 151, and the ohmic contacts 161 and 165 are formed by performinga photo etch process at one time.

A semiconductor layer, an ohmic contact layer, and a data metal layerare sequentially deposited on the gate insulating layer 140, and aphotosensitive film having different thickness according to positionsthereof are formed. After that, by using the photosensitive film as anetch mask, the semiconductor layer, the ohmic contact layer, and thedata metal layer are etched, so that the thin film transistor panel isfabricated. Here, the photosensitive film having different thicknessaccording to positions includes first and second portions, wherein thethickness of the second portion is smaller than that of the firstportion. The first portion is located in a wire region where the datalines 171, the drain electrodes 171, and the metal pieces 1718 areprovided. The second portion is located in a channel region of the thinfilm transistor.

As an example of a method of providing the photosensitive films of whichthicknesses vary according to positions thereof, there is a method ofproviding a translucent area in addition to a light transmitting areaand a light blocking area to a photo mask. In the translucent area, aslit pattern, a lattice pattern, or a thin film of which transmittanceor thickness is of an intermediate value is provided. In the case wherethe slit pattern is used, it is preferable that a width of each of theslits or an interval between the slits is smaller than a resolution ofan exposing apparatus used for the photo process. As another example,there is a method of using a reflow-able photosensitive film. Namely, byusing a general exposure mask having only the light transmitting areaand the light blocking area, the reflow-able photosensitive film isformed, and after that, a reflow process is performed to allow thephotosensitive material to flow into a region where the photosensitivefilm is not provided, so that a thin photosensitive film can be formedin the region.

By using the photosensitive film as an etch mask, a data metal layer, anohmic contact layer, and a semiconductor layer are sequentially etchedto form a shape of data wire lines roughly. Next, an ashing process isperformed on the photosensitive film to remove a second portion, and byusing a remaining first portion as an etch mask, the exposed data metallayer and the exposed ohmic contact layer are etched, so that a channelportion of the thin film transistor is formed.

By doing so, the duration of the photo process can be reduced, so thatit is possible to simplify the production method.

The liquid crystal display apparatus shown in FIGS. 13 and 14 may employthe features of the liquid crystal display apparatuses shown in FIGS. 1to 12.

Now, a liquid crystal display apparatus according to another exemplaryembodiment of the present invention will be described in detail withreference to FIG. 15.

FIG. 15 is a cross sectional view showing the liquid crystal displayapparatus according to another exemplary embodiment of the presentinvention taken along line IV-IV of FIG. 1.

As shown in FIG. 15, the liquid crystal display apparatus includes athin film transistor panel 100 and a common electrode panel 200 whichface each other, a liquid crystal layer 300 interposed between thepanels 100 and 200, and a pair of polarizers 12 and 22 disposed on outersurfaces of the panels 100 and 200.

The layered structures of the panels 100 and 200 according to thepresent exemplary embodiment are substantially the same as the layeredstructures of FIGS. 1 to 4.

In the thin film transistor panel 100, a plurality of gate lines 121 anda plurality of storage electrode lines 131 are disposed on a substrate110. The gate lines 121 include a plurality of gate electrodes 124 andend portions 129. The storage electrode lines 131 include a plurality ofstorage electrodes 133 a to 133 d and a plurality of connection portions133 e. A gate insulating layer 140, a plurality of semiconductor stripes151 including protrusions 154, a plurality of line-shaped ohmic contacts161 including protrusions 163, and a plurality of island-shaped ohmiccontacts 165 are sequentially formed on the gate lines 121 and thestorage electrode lines 131. A plurality of data lines 171 includingsource electrodes 173 and end portions 179, a plurality of drainelectrodes 175, and a plurality of isolated metal pieces 178 are formedon the ohmic contacts 161 and 165 and a gate insulating layer 140, and aprotective layer 180 is formed thereon. A plurality of contact holes181, 182, 183 a, 183 b, and 185 are formed on the protective layer 180and the gate insulating layer 140. A plurality of pixel electrodes 191including cutout portions 91 to 92 b, a plurality of overpasses 83, anda plurality of contact assistants 81 and 82 are formed on the protectivelayer 180, and an alignment layer 11 is formed thereon.

In the common electrode panel 200, a light blocking member 220, a coverfilm 250, a common electrode including cutout portions 71 to 72 b, andan alignment layer 21 are formed on an insulating substrate 210.

Unlike the liquid crystal display apparatus shown in FIGS. 1 to 4, colorfilters are not provided to the common electrode panel 200. Rather, aplurality of color filters 230 are formed under the protective layer 180of the thin film transistor panel 100.

The color filters 230 extend along rows of the pixel electrodes 191 in ashape of stripe in the longitudinal direction. The boundary between thetwo color filters 230 matches with the data line 171. However, the colorfilters 230 may be separated from each other or overlap each other toprevent light leakage between the pixel electrodes 191, similar to alight blocking member. Thus, in the case wherein the color filters 230overlap each other, the light blocking member 220 on the commonelectrode panel 200 may be omitted.

Through holes 235 though which the contact holes 185 pass are formed onthe color filters 230, and diameters of the through holes 235 are largerthan those of the contact holes 185. The color filters 230 are notprovided to peripheral regions where the end portions 129 of the gatelines 121 and the end portions 179 of the data lines 171 are disposed.

The liquid crystal display apparatus shown in FIG. 15 may employ thefeatures of the liquid crystal display apparatuses shown in FIGS. 1 to14.

For example, the features of the liquid crystal display apparatusaccording to the present exemplary embodiment may be employed by aliquid crystal display apparatus having a structure where differentvoltages are applied to two sub pixel electrodes divided from one pixelelectrode.

Now, a liquid crystal display apparatus according to another exemplaryembodiment of the present invention will be described in detail withreference to FIGS. 16 to 20.

FIG. 16 is a view showing a layout of a liquid crystal display apparatusaccording to another exemplary embodiment of the present invention. FIG.17 is a view showing a layout of a thin film transistor panel for theliquid crystal display apparatus of FIG. 16. FIG. 18 is a view showing alayout of a common electrode panel for the liquid crystal displayapparatus of FIG. 16. FIG. 19 is a cross sectional view showing theliquid crystal display apparatus taken along line XIX-XIX of FIG. 16.FIG. 20 is a cross sectional view showing the liquid crystal displayapparatus taken along line XX-XX of FIG. 16.

The liquid crystal display apparatus includes a thin film transistorpanel 100 and a common electrode panel 200 which face each other and aliquid crystal layer 300 interposed between the panels 100 and 200.

Firstly, the thin film transistor panel 100 will be described in detailwith reference to FIGS. 16, 17, and 19.

A plurality of gate lines 121 and a plurality of storage electrode lines131 are disposed on an insulating substrate 110 made of a transparentglass or a plastic material.

The gate lines 121 transmitting gate signals mainly extend in thetransverse direction. The gate lines 121 include a plurality of gateelectrodes 124 which protrude upwardly and downwardly and end portions129 which have wide areas for connection to other layers or externaldriver circuits. The storage electrode lines 131 which are applied withpredetermined voltages include stem lines which extend substantially inparallel to the gate lines 121, a plurality of storage electrode sets offirst, second, third, and fourth storage electrodes 133 a, 133 b, 133 c,and 133 d, and a plurality of connection portions 133 e. Each of thestorage electrode lines 131 is disposed between two adjacent gate lines121, and the stem line thereof is closer to the upper one of the twogate lines 121.

The first and second storage electrodes 133 a and 133 b extend in thelongitudinal direction to face each other. The first storage electrode133 a includes a fixed end connected to the stem line and a free endopposite to the fixed end, and the free end includes a protrusion. Thethird and fourth storage electrodes 133 c and 133 d extend in theslanted directions from the substantially central portion of the firststorage electrode 133 a to the upper and lower ends of the secondstorage electrode 133 b, respectively. The connection portions 133 e areconnected between adjacent storage electrode sets 133 a-133 d. However,various shapes and arrangement may be used for the storage electrodelines 131.

Side surfaces of the gate lines 121 and the storage electrode lines 131are slanted with respect to a surface of the substrate 110, at an anglein a range of about 30° to about 80°.

A gate insulating layer 140 made of a silicon nitride SiN_(x) or thelike is formed on the gate lines 121 and the storage electrode lines131.

A plurality of semiconductor stripes 151 made of a hydrogenatedamorphous silicon or polysilicon are formed on the gate insulating film140. The semiconductor stripes 151 mainly extend in the longitudinaldirection and include a plurality of protrusions 154 which extend towardthe gate electrodes 124. In addition, widths of the semiconductorstripes 151 are enlarged at regions near the gate lines 121 and thestorage electrode lines 131 to cover wide areas thereof.

A plurality of line-shaped and island-shaped ohmic contacts 161 and 165are formed on semiconductor stripes 151. The ohmic contacts 161 and 165may be made of made of silicide or an n+ hydrogenated amorphous siliconwhich is heavily doped with n-type impurities such as phosphorus (P).The line-shaped ohmic contacts 161 include a plurality of theprotrusions 163. Each pair of the protrusion 163 and the island-shapedohmic contact 165 is disposed on the protrusion 154 of the semiconductorstripe 151.

Side surfaces of the semiconductor stripes 151 and the ohmic contacts161 and 165 are also slanted with respect to the surface of thesubstrate 100, at an angle in a range of about 30° to about 80°.

A plurality of data lines 171, a plurality of drain electrodes 175, anda plurality of isolated metal pieces 178 are formed on the ohmiccontacts 161 and 165 and the gate insulating film 140.

The data lines 171 transmitting data signals mainly extend in thelongitudinal direction to intersect the gate lines 121 and the stemlines and the connection portions 133 e of the storage electrode lines131. The data lines 171 include a plurality of C-shaped sourceelectrodes 173 which protrude toward the gate electrodes 124 and endportions 179 which have wide areas for connection to other layers orexternal driver circuits.

The drain electrodes 175 are separated from the data lines 171. Thedrain electrodes 175 include bar-shaped portions which face the sourceelectrodes 173 with respect to the gate electrodes 124 and capacitivecoupling electrodes 176 which extend from the bar-shaped portions. Thebar-shaped portions of the drain electrodes 175 are partially surroundedby the source electrodes 173. The capacitive coupling electrodes 176 areconnected to each other. Each of the capacitive coupling electrodes 176has two slanted portions 176 a and 176 b which are parallel to the thirdand fourth storage electrodes 133 c and 133 d, respectively.

The metal pieces 178 are disposed on the gate lines 121 near the firststorage electrodes 133 a.

Side surfaces of the data lines 171, the drain electrodes 175, and themetal pieces 178 may also be slanted with respect to the surface of thesubstrate 110 at an angle ranging from about 30° to about 80°.

The ohmic contacts 161 and 165 are interposed only between theunderlying semiconductor stripes 151 and the overlying data lines 171and the drain electrodes 175 and have a function of reducing contactresistance therebetween. Although the widths of the semiconductorstripes 151 are smaller than those of the data lines 171 in mostregions, the widths of the portions where the gate lines 121 and thestorage electrode lines 121 intersect each other are enlarged asdescribed above. Therefore, the profile of surfaces at the intersectionsis smoothed, so that the disconnection of the data lines 171 can beprevented. The semiconductor stripes 151 have exposed portions uncoveredby the data lines 171 and the drain electrodes 175 in addition toportions disposed between the source electrodes 173 and the drainelectrodes 175.

A protective layer 180 is formed on the data line 171, the drainelectrode 175, the metal pieces 178, and the exposed portions of thesemiconductor stripes 151. The protective layer 180 is made of aninorganic insulating material or an organic insulating material, and asurface thereof may be planarized. A plurality of contact holes 182 and185 which expose end portions 179 of the data lines 171 and the drainelectrodes 175, respectively, are formed on the protective layer 180. Aplurality of contact holes 181 which expose end portions 129 of the gatelines 121, a plurality of contact holes 183 a which expose theprotrusions of the free ends of the first storage electrodes 133 a, anda plurality of contact holes 183 b which expose portions of the storageelectrode lines 131 at regions near the fixed ends of the first storageelectrodes 133 a are formed on the protective layer 180 and the gateinsulating layer 140. The contact holes 181, 182, 183 a, 183 b, and 185may be formed in various shapes such as polygon and circle. Side wallsof the contact holes 181, 182, 183 a, 183 b, and 185 may be slanted atan angle of about 30° to about 85° or have a step shape.

A plurality of pixel electrodes 191 including first and second sub pixelelectrodes 191 a and 191 b, a plurality of overpasses 83, and aplurality of contact assistants 81 and 82 are formed on the protectivelayer 180. The components may be made of, for example, a transparentconducive material such as ITO and IZO or a reflective metal such as,for example, aluminum (Al), silver (Ag), chromium (Cr), and an alloythereof.

The first sub pixel electrode 191 a is physically and electricallyconnected to the drain electrode 175 through the contact hole 185 andreceives a data voltage applied by the drain electrode 175.

The first and second sub pixel electrodes 191 a and 191 b are separatedfrom each other with respect to a gap 92 interposed therebetween. Thegap 92 includes a slanted portion which extends from the left side tothe right side thereof and a longitudinal portion which connects theslanted portions. The slanted portions have an angle of about 45° withrespect to the gate lines 121.

The first sub pixel electrode 191 a of the sub pixel electrodes 191 aand 191 b divided by the gap 92 is disposed above and under the secondsub pixel electrode 191 b to surround the second sub pixel electrode 191b, so that second sub pixel electrode 191 b is interposed between twoportions of the first sub pixel electrode 191 a. The first and secondsub pixel electrodes 191 a and 191 b face each other and have edgeswhich are slanted with an angle of about 45° with respect to the gateline 121. As a result, the first and second sub pixel electrodes 191 aand 191 b have an inversion symmetry with respect to a virtualtransverse central line bisecting the pixel electrode 191.

The second sub pixel electrode 191 b has a central cutout portion 91.The central cutout portion 91 extends along the transverse central lineand has an inlet at the right side. The inlet of the central cutoutportion 91 has a pair of slanted edges which are parallel to the gap 92.

Here, the first sub pixel electrodes 191 a are connected to the drainelectrodes 175 through the contact holes 185 to be directly applied withthe data voltages. The second sub pixel electrodes 91 b overlap thecapacitive coupling electrodes 176 which are connected to the first subpixel electrodes 191 a. As a result, the second sub pixel electrodes 191b are electromagnetically (e.g., capacitively) coupled to the first subpixel electrodes 191 a.

The pixel electrode 191 is divided into four partitions by the gap 92and the central cutout portion 91.

Referring to FIGS. 5 and 16, the pixel electrode 191 has a pair of firstprimary edges 193 and 194 facing each other and a pair of second primaryedges 195 and 196 connected to the first primary edges 193 and 194. Thefirst primary edges 193 and 194 are substantially parallel to the gateline 121, and the second primary edges 195 and 196 have inner and outerenvelopes. The inner and outer envelopes of the second primary edges 195and 196 are substantially perpendicular to the first primary edges 193and 194. Left corners of the pixel electrode 191 is constructed withchamfered slanted edges 193 c and 194 c, and the chamfered slanted edges193 c and 194 c have a slanted angle of about 45° with respect to thegate line 121.

The second primary edges 195 and 196 of the pixel electrode 191 have aplurality of sawteeth 910 and 920 which protrude from a plurality oflongitudinal lines 915 and 916 on the inner envelopes 951 and 961outwardly. The sawteeth 910 and 920 are symmetric with respect to thetransverse central line of the pixel electrode 191.

Each of the sawteeth 910 (920) has a first slanted edge 911 (921), asecond slanted edge 912 (922), and a top edge 913 (923) which isdisposed on the outer envelop 952 (962) to connect the first and secondslanted edges. The extension lines of the first and second slanted edges911 (912) and 912 (922) intersect each other with an acute angle ofabout 45° or less. The first slanted edge 911 (912) has an obtuse angleof about 135° or more with respect to the longitudinal line 915 (925),and the second edge 912 (922) has an angle of about 45° with respect tothe longitudinal line 915 (925). The extension lines of the first andsecond slanted edges 911 (912) and 912 (922) intersect each other withan acute angle of about 45° or less. In addition, the second slantededge 912 (922) is substantially parallel to the gap 92 and located on anextension line of the gap 92. The first slanted edge 911 (921) has anangle of about 45° or less or 135° or more with respect to the gap 92.

The upper portions of the sawteeth 910 and 920, that is, portions nearthe top edges 913 and 923 thereof overlap the data line 171. Thesawteeth 920 of the right edge 196 of the pixel electrode 191 which arelocated at the left of the data line 171 are engaged with the sawteeth910 of the pixel electrode 191 which are located at the left of the dataline 171. In addition, the facing edges of the engaged sawteeth 910 and920 are parallel to each other.

The number of the sawteeth 910 and 920 are in close relation to thenumber of the partitions of the pixel electrode 191 divided by thecutout portions and the gaps 91 and 92 or the number of the cutoutportions. The number of the partitions of the pixel electrode 191 andthe number of the sawteeth 910 and 920 may vary according to designfactors such as, for example, the size of the pixel electrode 191, theratio of lengths of the transverse and longitudinal sides of the pixelelectrode 191, and types or characteristics of the liquid crystal layer3.

The pixel electrodes 191 overlap the adjacent gate lines 121 or theadjacent data lines 171, so that it is possible to increase the apertureratio of the liquid crystal display apparatus.

The overpass 83 is disposed across the gate line 121 and connected tothe exposed portion of the storage electrode line 131 and the exposedend portion of the free end of the first storage electrode 133 a throughthe contact holes 183 b and 18 b which are located at the oppositepositions with respect to the gate line 121, respectively. The storageelectrodes 133 a and 133 b and the storage electrode line 131 togetherwith the overpasses 83 may be used to repair defects of the gate lines121, the data lines 171, and the thin film transistors.

The contact assistants 81 and 82 are connected to the end portion 129 ofthe gate line 121 and the end portion 179 of the data line 171 throughthe contact holes 181 and 182, respectively

Now, the common electrode panel 200 will be described with respect toFIGS. 16, 18, and 20.

A light blocking member 220 is formed on the insulating substrate 210made of a transparent glass or a plastic material. The light-blockingmember 220 includes a plurality of opening portions 225 which face thepixel electrodes 191 and have a shape of a substantial rectangle. Awidth of portions 221 of the light blocking member 220 corresponding tothe date lines 171 is substantially the same as that of the data lines171.

However, the widths may be defined by taking into considerationalignment error of the panels 100 and 200. The light blocking member 220includes enlarged portions 222 which block spaces between the engagedsawteeth 910 and 920 which protrude outwardly from the data lines 171.The light blocking member 220 may include portions corresponding to thethin film transistors.

A plurality of color filters 230 are formed on the substrate 210. Mostportions of the color filters 230 are disposed in regions surrounded bythe light-blocking member 220, and the color filters 230 extend alongrows of the pixel electrodes 191 in the longitudinal direction. Each ofthe color filters 230 can display one of primary colors such as red,green, and blue.

A cover film 250 is formed on the color filters 230 and thelight-blocking member 220. The cover film 250 may be made of an(organic) insulating material. The cover film 250 prevents the colorfilters 230 from being exposed and provides a planarized surface. Thecover film 250 may be omitted.

A common electrode 270 is formed on the cover film 250. The commonelectrode 270 is made of a transparent conductive material such as, forexample, ITO and IZO. A plurality of cutout portion sets of cutoutportions 71, 72 a, and 72 b are formed on the common electrode 270.

The common electrode panel 270 includes a plurality of cutout portionsets 71-72 b.

One cutout portion set 71-72 b faces one pixel electrode 191 andincludes a central cutout portion 71, a lower cutout portion 72 a, andan upper cutout portion 72 b. The cutout portions 71, 72 a, and 72 b aredisposed between the adjacent cutout portions 91, 92 a, and 92 b of thepixel electrode 191 or between the cutout portions 92 a and 92 b and thechamfered edge of the pixel electrode 191.

In addition, each of the cutout portions 71, 72 a, and 72 b extendssubstantially in parallel to the lower or upper cutout portion 92 a or92 b of the pixel electrode 191 and include at least one slantedportion. The cutout portions 71, 72 a, and 72 b have an inversionsymmetry with respect to the transverse central line of the pixelelectrode 191.

Each of the lower and upper cutout portions 72 a and 72 b includes aslanted portion and a transverse portion. The slanted portion extendssubstantially from the upper or lower side to the left side of the pixelelectrode 191 to overlap the longitudinal side of the pixel electrode191. A long side facing the slanted portion intersects the first andsecond slanted edges 911, 912, 921, and 922 of the sawteeth of the pixelelectrode 191 or extension lines thereof or is located on the extensionlines. The transverse portion extends from the end of the slantedportion along the transverse side of the pixel electrode 191 with anobtuse angle with respect to the slanted portion and overlaps thetransverse side.

The central cutout portion 71 includes a central transverse portion anda pair of slanted portions. The central transverse portion extendssubstantially from the left side of the pixel electrode 191 along thetransverse central line of the pixel electrode 191 in the rightdirection. A pair of the slanted portions extend substantially inparallel to the lower and upper cutout portions 72 a and 72 b from theend of the central transverse portion to the right side of the pixelelectrode 191 with an obtuse angle with respect to the centraltransverse portion, respectively.

The number of the cutout portions 71, 72 a, and 72 b may vary accordingto the design factors, and the light-blocking member 220 overlaps thecutout portions 71, 72 a, and 72 b to prevent the light leakage in avicinity of the cutout portions 71, 72 a, and 72 b.

Spacers made of an insulating material are disposed on the commonelectrode panel 200 to maintain a constant interval between the panels100 and 200.

The light blocking member 220 overlaps the cutout portions 71, 72 a, and72 b to prevent the light leakage in a vicinity of the cutout portions71, 72 a, and 72 b. In addition, in this embodiment, the slantedportions 176 a and 176 b of the capacitive coupling electrodes 176overlaps the cutout portions 71, 72 a, and 72 b to prevent the lightleakage in a vicinity of the cutout portions 71, 72 a, and 72 b.

Here, the slanted angles of the sawteeth 910 and 920 of the pixelelectrode 191 may be formed to be larger by about 1° or about 15° thanthe angles of the slanted portions of the central cutout portions 71 ofthe common electrode 270.

Alignment films 11 and 21 are coated on inner surfaces of the panels 100and 200, respectively. The alignment films 11 and 21 may be avertically-aligned film. Polarizers 12 and 22 are disposed on outersurfaces of the panels 100 and 200, respectively.

When the common voltage and the data voltage are applied to the commonelectrode 270 and the pixel electrode 191, respectively, a primaryelectric field is generated in a direction substantially perpendicularto the surfaces of the panels 100 and 200. In response to the electricfield, the liquid crystal molecules 31 have a tendency to change themajor axis direction to be perpendicular to the direction of theelectric field. On the other hand, the cutout portions 71, 72 a, 72 b,91, 92 a, and 92 b of the common electrode 270 and the pixel electrode191 and the slanted edges of the sub pixel electrode 191 a distort theelectric field to generate a horizontal component of the electric fieldfor determining the tilted direction of the liquid crystal molecules.The horizontal component of the electric field is perpendicular to theedges of the cutout portions 71, 72 a, 72 b, 91, 92 a, and 92 b and theslanted edges of the pixel electrode 191. In the horizontal component ofthe primary electric field at the facing two edges of the cutoutportions 71, 72 a, 72 b, 91, 92 a, and 92 b are opposite to each other.

Due to such electric fields, the cutout portions 71, 72 a, 72 b, 91, 92a, and 92 b can control the tilted direction of the liquid crystalmolecules of the liquid crystal layer 3. As a result, the liquid crystalmolecules in domains defined by the adjacent cutout portions 71, 72 a,72 b, 91, 92 a, and 92 b or in domains defined by the right and leftslanted edges of the sub pixel electrodes 191 a and 191 b are tilted inthe direction perpendicular to the longitudinal directions of the cutoutportions 71, 72 a, 72 b, 91, 92 a, and 92 b. The long edges of each ofthe domains are substantially parallel to each other and have an angleof about 45° with respect to the gate line 121. Most of the liquidcrystal molecules in the domain are slanted in four directions, so thata wide viewing angle can be obtained.

Therefore, by providing the sawteeth to the sides of the sub pixelelectrodes 191 a and 191 b adjacent to the data line 171, as describedabove in the embodiment shown in FIGS. 1 to 4, the secondary electricfield generated between the adjacent pixel electrodes 191 can controlthe alignment of the liquid crystal molecules 31 in the sub areas.

The widths of the cutout portions 71, 72 a, 72 b, 91, 92 a, and 92 b maybe in the range of, for example, from about 9 μm to about 12 μm.

At least one of the cutout portions 71, 72 a, 72 b, 91, 92 a, and 92 bmay be replaced with a protrusion or a depression. The protrusions maybe made of an organic or inorganic material and disposed above or underthe electric field generating electrodes 191 a, 191 b, and 270. Inaddition, the widths of the protrusions may be in the range of, forexample, from about 5 μm to about 10 μm.

On the other hand, when the tilted direction of the liquid crystalmolecules 31 has an angle of about 45° with respect to the transmissionaxes of the polarizers 12 and 22, the highest brightness can beobtained. In this embodiment, in all the domains, the tilted directionof the liquid crystal molecules 31 has an angle of about 45° withrespect to the gate lines 121, and the gate lines 121 are parallel to orperpendicular to the peripheral lines of the panels 100 and 200.Accordingly, in this embodiment, the polarizers 12 and 22 are disposedon the panels 100 and 200 such that the transmission axes thereof areparallel to or perpendicular to the peripheral lines of the panels 100and 200, to thereby obtain the highest brightness and reduce productioncost of the polarizers 21 and 22.

In the liquid crystal display apparatus according to the embodiment, asdescribed above, the second sub pixel electrodes 191 b areelectromagnetically (capacitively) coupled to the first sub pixelelectrodes 191 a. While the first sub pixel electrodes 191 a aredirectly connected to the thin film transistor Q through the drainelectrode 175 thereof to be applied with an image signal voltage whichis transmitted through the thin film transistor from the data line 171,the voltage of the second sub pixel electrode 191 b becomes acapacitively coupled voltage to the first sub pixel electrode 191 a.

Therefore, in this embodiment, the absolute value of the voltage of thesecond sub pixel electrode 191 b is always lower than that of the firstsub pixel electrode 191 a.

The capacitively coupled structure may have the following structures.

Now, a liquid crystal display apparatus according to another exemplaryembodiment of the present invention will be described in detail withreference to FIGS. 21 to 24.

FIG. 21 is a view showing a layout of a liquid crystal display apparatusaccording to another exemplary embodiment of the present invention. FIG.22 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXII-XXII of FIG. 21. FIG. 23 is a crosssectional view showing the liquid crystal display apparatus taken alongline XXIII-XXIII of FIG. 21. FIG. 24 is a schematic equivalent circuitdiagram of a pixel of the liquid crystal display apparatus shown in FIG.21.

Referring to FIGS. 21 to 24, the liquid crystal display apparatusincludes a thin film transistor panel 100 and a common electrode panel200 which face each other and a liquid crystal layer 300 interposedbetween the panels 100 and 200.

Firstly, the thin film transistor panel 100 will be described in detail.

A plurality of gate conductors including a plurality of gate lines 121,a plurality of storage electrode lines 131, and a plurality ofcapacitive electrodes 136 are disposed on an insulating substrate 110made of a transparent glass or a plastic material.

The gate lines 121 transmitting gate signals mainly extend in thetransverse direction. The gate lines 121 include a plurality of gateelectrodes 124 which protrude upwardly and end portions 129 which havewide areas for connection to other layers or external driver circuits

The storage electrode lines 131 which are applied with predeterminedvoltages include lower and upper stem lines 131 a 1 and 131 a 2 whichextend substantially in parallel to the gate lines 121. Each of thestorage electrode lines 131 is disposed between adjacent two gate lines121. The lower stem line 131 a 1 is closer to the lower one of the twogate lines 121.

The upper stem line 131 a 2 is closer to upper one of the two gate lines121.

The lower and upper stem lines 131 a 1 and 131 a 2 include lower andupper storage electrodes 1371 a and 1371 b which are enlarged downwardlyand upwardly.

The capacitive electrode 136 has a shape of a rectangle which iselongated in the transverse direction. The capacitive electrode 136 isseparated from the gate line 121 and the storage electrode line 131. Thecapacitive electrode 136 is disposed between a pair of the lower andupper storage electrodes 1371 a and 1371 b and separated bysubstantially the same distance from the lower and upper storageelectrodes 1371 a and 1371 b. In addition, the capacitive electrode 136is also separated by the same distance from the adjacent two gate lines121. However, various shapes and arrangement may be used for the storageelectrode lines 131.

Side surfaces of the gate conductors 121, 131, and 136 are slanted withrespect to a surface of the substrate 110, at an angle in a range ofabout 30° to about 80°.

A gate insulating layer 140 made of a silicon nitride SiN_(x) or thelike is formed on the gate conductors 121, 131, and 136.

A plurality of island-shaped semiconductor members 154 made of ahydrogenated amorphous silicon (abbreviated to a-Si) or polysilicon areformed on the gate insulating film 140. The semiconductor members 154are disposed on the gate electrodes 124 and include expansion portionscovering boundaries of the gate lines 121. In addition, island-shapedsemiconductor members may be separately formed to cover boundaries ofthe storage electrode lines 131.

A plurality of island-shaped ohmic contacts 163 and 165 are formed onsemiconductor members 154. The ohmic contacts 163 and 165 may be made ofmade of silicide or an n+ hydrogenated amorphous silicon which isheavily doped with n-type impurities such as phosphorus (P). A pair ofthe ohmic contacts 163 and 165 are disposed on the semiconductor member154.

Side surfaces of the semiconductor members 154 and the ohmic contacts163 and 165 are also slanted with respect to the surface of thesubstrate 100 at an angle in a range of about 30° to about 80°.

A plurality of data conductors including a plurality of data lines 171and a plurality of drain electrodes 175 are formed on the ohmic contacts163 and 165 and the gate insulating film 140.

The data lines 171 transmitting data signals mainly extend in thelongitudinal direction to intersect the gate lines 121 and the storageelectrode lines 131. The data lines 171 include a plurality of sourceelectrodes 173 which protrude toward the gate electrodes 124 and endportions 179 which have wide areas for connection to other layers orexternal driver circuits.

The drain electrode 175 is separated from the data line 171. The drainelectrodes 175 include a bar-shaped end portion which faces a sourceelectrode 173 with respect to the gate electrode 124 interposedtherebetween. The bar-shaped end portion is partially surrounded by theU-shaped source electrode 173.

The drain electrode 175 includes lower, upper, and central expansionportions 177 a 1, 177 a 2, and 176 and a pair of connection portions 178a 1 and 178 a 2 which connects the expansion portions. The expansionportions 177 a 1, 177 a 2, and 176 have a shape of a rectangle which iselongated in the transverse direction. The connection portions 178 a 1and 178 a 2 connects the expansion portions 177 a 1, 177 a 2, and 176 atboth sides thereof and are substantially parallel to the data lines 171

The lower and upper expansion portions 177 a 1 and 177 a 2 overlap thelower and upper storage electrodes 137 a 1 and 137 a 2.

The central expansion portion 176 overlaps the capacitive electrode 136.Hereinafter, the central expansion portion 176 is referred to as acoupling electrode.

A contact hole 176H is formed at the right end portion of the couplingelectrode 176. The shape of the coupling electrode 176 is formed to besubstantially the same as that of the capacitive electrode 136.

For example, side surfaces of the data conductors 171, 175, and 176 arealso slanted with respect to the surface of the substrate 110 at anangle ranging from about 30° to about 80°.

The ohmic contacts 163 and 165 are interposed only between theunderlying semiconductor members 154 and the overlying data conductors171 and 175 and reduce contact resistance therebetween. The extensionportions of the semiconductor members disposed on the gate lines 121allows the profile of surfaces to be smoothed, so that the disconnectionof the data lines 171 can be prevented. The semiconductor members 154have planar shapes which are substantially equal to shapes of the datalines 171, the drain electrodes 175, and the underlying ohmic contacts161 and 165. The semiconductor members 154 have exposed portionsuncovered by the data conductors 171 and 175 in addition to portionsdisposed between the source electrodes 173 and the drain electrodes 175.

A protective layer 180 is formed on the data conductors 171 and 175 andthe exposed portions of the semiconductor members 154. The protectivelayer 180 is made of an inorganic insulating material or an organicinsulating material, and a surface thereof may be planarized. Aplurality of contact holes 182 which expose end portions 179 of the datalines 171 and a plurality of contact holes 185 a 1 and 185 a 2 whichexpose lower and upper expansion portions 177 a 1 and 177 a 2 of thedrain electrodes 175, respectively, are formed on the protective layer180. In addition, a plurality of contact holes 181 which expose endportions 129 of the gate lines 121 and a plurality of contact holes 186which expose the capacitive electrodes 136 through contact holes 176H ofcoupling electrodes 176 are formed on the protective layer 180 and thegate insulating layer 140.

A plurality of pixel electrodes 191 and a plurality of contactassistants 81 and 82 are formed on the protective layer 180. Thecomponents may be made of a transparent conducive material such as, forexample, ITO and IZO or a reflective metal such as, for example,aluminum (Al), silver (Ag), chromium (Cr), and an alloy thereof.

The pixel electrode 191 has a pair of first primary edges 193 and 194facing each other and second primary edges which are connected to thefirst primary edges 193 and 194 and include a plurality of sawteeth 90and lower edges 90 c connecting the sawteeth 90. Each of the sawteeth 90includes first and second slanted edges 90 a and 90 d which are slantedwith respect to the first primary edges 193 and 194 and an upper edge 90b. The first primary edges 193 and 194 are parallel to the gate lines121. The first primary edges 193 and 194 and the second primary edgesconstitute an approximate rectangle. The pixel electrode 191 has thefour chamfered corners which has an angle of about 45° with respect tothe gate lines 121.

The first slanted edge 90 a partially overlaps the data line 171. Thefirst slanted edges 90 a of the adjacent two pixel electrodes 191 aredisposed to face each other in parallel to each other.

Each of the pixel electrodes 191 includes lower and upper sub pixelelectrodes 191 a 1 and 191 a 2 and a central sub pixel electrode 191 bwhich are divided by the lower and upper gaps 93 a and 93 b. The lowerand upper gaps 93 a and 93 b extend substantially in the slanteddirections from the left side to the right side of the pixel electrode191. Accordingly, the central sub pixel electrode 191 b has a shape ofisosceles trapezoid, and the lower and upper sub pixel electrodes 191 a1 and 191 a 2 have a shape of rectangular trapezoid. The lower and uppergaps 93 a and 93 b are perpendicular to each other with slanted anglesof about 45° with respect to the gate line 121.

The lower and upper sub pixel electrodes 191 a 1 and 191 a 2 areconnected to the lower and upper expansion portions 177 a 1 and 177 a 2of the drain electrode 175 through the contact holes 185 a 1 and 185 a2.

The central sub pixel electrode 191 b is connected to the capacitiveelectrode 136 through the contact hole 186 and overlaps a couplingelectrode 176. The central sub pixel electrode 191 b and the capacitiveelectrode 136 together with the coupling electrode 176 constitute acoupling capacitor.

A central cutout portion 91 and first upper and lower slanted cutoutportions 92 a and 92 b are formed in the central sub pixel electrode 191b. A second lower slanted cutout portion 94 a is formed in the lower subpixel electrode 191 a 1. A second upper slanted cutout portions 94 b isformed in the upper sub pixel electrode 191 a 2. The cutout portions 91,92 a, 92 b, 94 a, and 94 b divide the sub pixel electrodes 191 b, 191 a1, and 191 a 2 into a plurality of sub areas. The pixel electrode 1991including the cutout portions 91, 92 a, 92 b, 94 a, and 94 b and thegaps 93 a and 93 b (hereinafter, referred as cutout portions) have aninversion symmetry with respect to the capacitive electrode 136.

The lower and upper slanted cutout portions 92 a to 94 b extendsubstantially in the slanted directions from the right corners, thelower side, or the upper side to the right side of the pixel electrode191. The lower and upper slanted cutout portions 92 a to 94 b extend inperpendicular to each other with slanted angles of about 45° withrespect to the gate line 121. Each of the lower and upper slanted cutoutportions 92 a, 92 b, 94 a, and 94 b has an inlet at the right or leftside of the pixel electrode 191. The inlets may be connected to theconcave portions 90 c.

The first slanted edges 90 a of the sawteeth 90 of the second primaryedges have an obtuse angle with respect to the slanted cutout portions92 a to 94 a, and the second slanted edges 90 d thereof aresubstantially parallel to the slanted cutout portions 92 b to 94 b.

The central cutout portion 91 extends along the storage electrode line131 and has an inlet toward the left side of the pixel electrode 191.The inlet of the central cutout portion 91 has a pair of slanted edgeswhich are substantially parallel to the lower cutout portions 92 a to 94a and the upper cutout portions 92 b˜94 b, respectively.

The number of the cutout portions and the number of the partitions mayvary according to design factors such as, for example, the size of thepixel electrodes 191 a 1, 191 a 2, and the 191 b, the ratio of lengthsof the transverse and longitudinal sides of the pixel electrodes 191 a1, 191 a 2, and the 191 b, and the types or characteristics of theliquid crystal layer 3.

The contact assistants 81 and 82 are connected to the end portion 129 ofthe gate line 121 and the end portion 179 of the data line 171 throughthe contact holes 181 and 182, respectively.

Now, the common electrode panel 200 will be described in detail. A lightblocking member 220 is formed on the insulating substrate 210 made of atransparent glass or a plastic material. The light blocking member 220includes line-shaped portions 211 corresponding to the data lines 171,enlarged portions 222 formed by enlarging some portions of the lightblocking member 220, and plane-shaped portions 223 corresponding to thethin film transistors. The light blocking member 220 prevents lightleakage between the pixel electrodes 191 and defining opening regionsfacing the pixel electrodes. However, the light blocking member 220 mayfurther include a plurality of opening portions facing the pixelelectrodes 191 and which have substantially the same shape as the pixelelectrodes 191.

A plurality of color filters 230 are formed on the substrate 210. Mostportions of the color filters 230 are disposed in regions surrounded bythe light-blocking member 220. In addition, the color filters 230 extendalong rows of the pixel electrodes 191 in the longitudinal direction.Each of the color filters 230 can display one of primary colors such asred, green, and blue.

A cover film 250 is formed on the color filters 230 and thelight-blocking member 220. The cover film 250 may be made of an(organic) insulating material. The cover film 250 prevents the colorfilters 230 from being exposed and provides a planarized surface. Thecover film 250 may be omitted.

A common electrode 270 is formed on the cover film 250.

A plurality of cutout portions 71, 72 a, 72 b, 73 a, 73 b, 74 a, 74 b,and 75 are formed on the common electrode 270.

One cutout portion set 71-75 faces one pixel electrode 191 and includesa central cutout portion 71, first to third lower slanted cutoutportions 72 a, 73 a, and 74 a, first to third upper slanted cutoutportions 72 b, 73 b, and 74 b, and a connection portions 75. The cutoutportions 71, 72 a, 72 b, 73 a, 73 b, 74 a, and 74 b are disposed betweenthe adjacent cutout portions 91, 92, 93 a, 93 b, 94 a, 94 b, 95 a, and95 b of the pixel electrode 191 or between the cutout portions 91, 92,93 a, 93 b, 94 a, 94 b, 95 a, and 95 b and the chamfered edge of thepixel electrode 191. In addition, each of the cutout portions 71, 72 a,72 b, 73 a, 73 b, 74 a, and 74 b extends substantially in parallel tothe lower cutout portions 93 a, 94 a, and 95 a or upper cutout portions93 b, 94 b, and 95 b of the pixel electrode 191 and include at least oneslanted portion.

The first lower and upper slanted cutout portions 72 a and 72 b extendsubstantially from the right side to the left side of the pixelelectrode 191. The second lower and upper slanted cutout portions 73 aand 73 b extend substantially from the right side to the upper and lowerleft corners of the pixel electrode 191, respectively. The third lowerand upper slanted cutout portions 74 a and 74 b extend substantiallyfrom the right side to the lower and upper sides of the pixel electrode191, respectively. The third lower and upper slanted cutout portions 74a and 74 b include terminated transverse portions which extend from theends of the third lower and upper slanted cutout portions 74 a and 74 bto overlap the lower and upper sides of the pixel electrode 191. Theterminated transverse portion has an obtuse angle with respect to theslanted cutout portions 74 a and 74 b.

The central cutout portion 71 includes a central transverse portion anda pair of slanted portions. The central transverse portion extendssubstantially from the right side of the pixel electrode 191 along thestorage electrode line 131 in the left direction. A pair of the slantedportions extend substantially in parallel to the lower and upper cutoutportions 72 a, 72 b, 73 a, 73 b, 74 a, and 74 b from the end of thecentral transverse portion to the left side of the pixel electrode 191.

The one end of the one slanted portion of the central cutout portion 71and the one end of the second lower cutout portion 73 a of the adjacentpixel electrode are connected with one of the connection portions 75.The one end of the other slanted portion of the central cutout portion71 and the one end of the second upper cutout portion 73 b of theadjacent pixel electrode are connected with one of the connectionportions 75. The one end of the first lower slanted cutout portion 72 aand the one end of the third lower slanted cutout portion 74 a of theadjacent pixel electrode are connected with one of the connectionportions 75. The one end of the first upper slanted cutout portion 72 band the one end of the third upper slanted cutout portion 74 b of theadjacent pixel electrode are connected with one of the connectionportions 75. The connection portions 75 are parallel to the firstslanted edges 90 a of the pixel electrode 191 and located at portionscorresponding to the data line 171. The width of the connection portions75 in this embodiment is larger by about 8 μm than the interval betweenthe adjacent pixels 191. The enlarged portions 222 of the light blockingmember 220 may have a width larger than the other portions correspondingto the connection portions 75.

On the other hand, according to this embodiment of the presentinvention, a plurality of convex notches 7 which are periodicallydisposed with a predetermined interval may be provided in the cutoutportions 71 to 74 b.

Alignment films 11 and 21 are coated on inner surfaces of the panels 100and 200, respectively. The alignment films 11 and 21 may be avertically-aligned film. Polarizers are disposed on outer surfaces ofthe panels 100 and 200, respectively. The transmission axes of the twopolarizers are perpendicular to each other, and one of the transmissionaxes is preferably parallel to the gate lines 121. In the case of areflective liquid crystal display apparatus, one of the two polarizersmay be omitted.

The liquid crystal display apparatus according to the present embodimentmay further include a phase retardation film for compensating forretardation of the liquid crystal layer 3. The phase retardation filmshave birefringence and have a function of inversely compensating for thebirefringence of the liquid crystal layer 3.

The liquid crystal display apparatus may include a backlight unit forsupplying light to the polarizers, the phase retardation film, thepanels 100 and 200, and the liquid crystal layer 3.

The liquid crystal layer 3 has a negative anisotropic permittivity, andthe liquid crystal molecules 31 of the liquid crystal layer 3 arealigned so that the major axes thereof are perpendicular to the surfacesof the two panels 100 and 200 when no electric field is applied to theliquid crystal molecules. As a result, incident light cannot passthrough the perpendicular polarizers and is thus blocked.

In the liquid crystal display apparatus shown in FIGS. 21 to 25, opaquemembers such as the storage electrode lines 131, the capacitiveelectrodes 136, the expansion portions 177 a 1, 177 a 2, and 176 of thedrain electrodes 175, and the connection portions 178 a 1 and 178 a 2and transparent members such as the pixel electrodes 191 and the commonelectrode 270 including the cutout portions 91 to 94 b and 71 to 75 aresymmetrically disposed with respect to the capacitive electrodes 136which are separated by the same distance from the adjacent two gatelines 121.

Now, the liquid crystal display apparatus will be described more indetail with respect to FIG. 24.

Referring to FIG. 24, one pixel of the liquid crystal display apparatusincludes a thin film transistor Q, a first sub pixel electrode includinga first liquid crystal capacitor C_(LC)a and a storage capacitor C_(ST),a second sub pixel electrode including a second liquid crystal capacitorC_(LC)b, and a coupling capacitor Ccp.

The first liquid crystal capacitor C_(LC)a includes the upper and lowersub pixel electrodes 191 a 1 and 191 a 2 as the one port thereof, thecommon electrode 270 as the other port thereof, and the liquid crystallayer 3 interposed between the two ports as the dielectric member.Similarly, the second liquid crystal capacitor C_(LC)b includes thecentral sub pixel electrode 191 b as the one port thereof, acorresponding portion of the common electrode 270 as the other portthereof, and the liquid crystal layer 3 interposed between the two portsas the dielectric member.

The storage capacitor C_(ST) includes the lower and upper expansionportions 177 a 1 and 177 a 2 of the drain electrode 175 as the one portthereof, the lower and upper storage electrodes 137 a 1 and 137 a 2 asthe other port thereof, and a corresponding portion of the gateinsulating layer 140 interposed between the two ports as the dielectricmember. The coupling capacitor C_(CP) includes the central sub pixelelectrode 191 b and the capacitive electrode 136 as the one portthereof, the coupling electrode 176 as the other port thereof, andcorresponding portions of the proactive layer 180 and the gateinsulating layer 140 interposed between the two ports as the dielectricmember.

The first liquid crystal capacitor C_(LC)a and the storage capacitorC_(ST) are connected to the drain electrode of the thin film transistorQ. The coupling capacitor C_(CP) is connected between the thin filmtransistor Q and the second liquid crystal capacitor C_(LC)b. The commonelectrode 270 is applied with a common voltage Vcom. The storageelectrode line 131 may also be applied with the common voltage Vcom.

The thin film transistor Q applies a data voltage from the data line 171to the first liquid crystal capacitor C_(LC)a and the coupling capacitorC_(CP) according to a gate signal from the gate line 121. The couplingcapacitor C_(CP) changes a size of the voltage and transmits the voltageto the second liquid crystal capacitor C_(LC)b. p If the storageelectrode line 131 is applied with the common voltage Vcom, and if theelectrostatic capacitances of the capacitors C_(LC)a, C_(ST), C_(LC)b,and Ccp are denoted by C_(LC)a, C_(ST), C_(LC)b, and Ccp, a voltage Vacharged in the first liquid crystal capacitor C_(LC)a and a voltage Vbcharged in the second liquid crystal capacitor C_(LC)b have a relationas follows.Vb=Va[Ccp/(Ccp+C _(LC) b)]

Since a value of Ccp/(Ccp+C_(LC)b) is less than 1, the voltage Vbcharged in the second liquid crystal capacitor C_(LC)b is always smallerthan the voltage Va charged in the first liquid crystal capacitorC_(LC)a. Even in a case where the voltage of the storage electrode line131 is not the common voltage Vcom, the relation is satisfied.

When the voltage difference between the two ports of the first or secondliquid crystal capacitor C_(LC)a or C_(LC)b is generated, an electricfield is generated in the liquid crystal layer 3 in a directionsubstantially perpendicular to the panels 100 and 200. In response tothe electric field, the liquid crystal molecules have a tendency tochange the major axis direction to be perpendicular to the direction ofthe electric field. According to the degree of the tilted angle of theliquid crystal molecules, polarization of the light passing through theliquid crystal layer 3 changes. The change in the polarization resultsin a change in transmittance of the light due to the polarizers 12 and22, so that an image is display on the liquid crystal display apparatus.

The tilted angle of the liquid crystal molecules varies according to thestrength of the electric filed. Since the voltage Va charged in thefirst liquid crystal capacitor C_(LC)a is different from the voltage Vbcharged in the second liquid crystal capacitor C_(LC)b, the tiltedangles of the liquid crystal molecules in the first and second subpixels are different from each other. As a result, the brightnesses ofthe two sub pixel electrodes are different from each other. Accordingly,by adjusting the voltage Va charged in the first liquid crystalcapacitor C_(LC)a and the voltage Vb charged in the second liquidcrystal capacitor C_(LC)b, the brightness of the image seen from a sideof the liquid crystal display apparatus can be closest to the brightnessof the image seen from a front of the liquid crystal display apparatus,thereby improving the side viewing angle.

The ratio of the voltage Va charged in the first liquid crystalcapacitor C_(LC)a and the voltage Vb charged in the second liquidcrystal capacitor C_(LC)b can be adjusted by changing the electrostaticcapacitance of the coupling capacitor C_(CP). The electrostaticcapacitance of the coupling capacitor C_(CP) can be changed by adjustingthe overlapping area and distance between the second sub pixel electrode191 b, the capacitive electrode 136, and the coupling electrode 176. Forexample, by removing the capacitive electrode 136 and disposing thecoupling electrode 176 at the position where the capacitive electrode136 is removed, the distance between the coupling electrode 176 and thesecond sub pixel electrode 191 b can increase. For example, the voltageVb charged in the second liquid crystal capacitor C_(LC)b may be about0.6 to about 0.8 times larger than the voltage Va charged in the firstliquid crystal capacitor C_(LC)a.

In contrast, the voltage Vb charged in the second liquid crystalcapacitor C_(LC)b may be designed to larger than the voltage Va chargedin the first liquid crystal capacitor C_(LC)a by precharging the secondliquid crystal capacitor C_(LC)b with a predetermined voltage such asthe common voltage Vcom.

Preferably, the ratio of areas of the lower and upper sub pixelelectrodes 191 a 1 and 191 a 2 and an area of the central sub pixelelectrode 191 b is in a range of from about 1:0.85 to about 1:1.15. Thenumber of the sub pixel electrode of each of the sub pixel may vary.

In addition, by providing the sawteeth to the side of the pixelelectrode 191 adjacent to the data line 171, the secondary electricfield generated between the adjacent pixel electrodes 191 can controlthe alignment of the liquid crystal molecules 31 in the sub areas. Inaddition, by providing the connection portions 75 at the positionscorresponding to the regions where the first slanted edges 90 a of theadjacent two pixel electrodes 191 face each other, the alignment of theliquid crystal molecules 31 in the sub areas can be controlled.

Now, a liquid crystal display apparatus according to another exemplaryembodiment of the present invention will be described in detail withreference to FIGS. 25 to 29.

FIG. 25 is a view showing a layout of a liquid crystal display apparatusaccording to another exemplary embodiment of the present invention. FIG.26 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXVI-XXVI of FIG. 25. FIG. 27 is a crosssectional view showing the liquid crystal display apparatus taken alongline XXVII-XXVII of FIG. 25.

Referring to FIGS. 25 to 27, the liquid crystal display apparatusincludes a thin film transistor panel 100 and a common electrode panel200 which face each other and a liquid crystal layer 300 interposedbetween the panels 100 and 200.

Firstly, the thin film transistor panel 100 will be described in detail.

A plurality of gate conductors including a plurality of pairs of firstand second gate lines 121 a and 121 b and a plurality of storageelectrode lines 131 are disposed on an insulating substrate 110 made ofa transparent glass or a plastic material.

The first and second gate lines 121 a and 121 b transmitting gatesignals mainly extend in the transverse direction and are located aboveand under the storage electrode line 131, respectively.

The first gate line 121 a include a first gate electrode 124 a whichprotrudes downwardly and an end portion 129 a which is disposed in theleft side and has an wide area for connection to other layers orexternal driver circuits.

The second gate line 121 b include a second gate electrode 124 b whichprotrudes upwardly and an end portion 129 b which is disposed in theleft side and has an wide area for connection to other layers orexternal driver circuits. Alternatively, the end portions 129 a and 129b may be disposed at the right side. Otherwise, the end portions 129 aand 129 b may be disposed at the different sides.

The storage electrode lines 131 which are applied with predeterminedvoltages extend substantially in parallel to the gate lines 121. Each ofthe storage electrode lines 131 is disposed between the adjacent firstand second gate lines 121 a and 121 b. The storage electrode line 131 isslightly closer to the first gate line 121 a than the second gate line121 b and separated by substantially the same distance from the adjacenttwo second gate lines 121 b. Each of the storage electrode lines 131includes a storage electrode 137 which is enlarged upwardly anddownwardly. The storage electrode 137 has a shape of an approximaterectangle and is symmetrical with respect to the storage electrode line131. However, various shapes and arrangement may be used for the storageelectrode lines 131 and the storage electrodes 137.

Side surfaces of the gate conductors 121 a, 121 b, and 131 are slantedwith respect to a surface of the substrate 110, at an angle in a rangeof about 30° to about 80°.

A gate insulating layer 140 made of a silicon nitride SiN_(x) or thelike is formed on the gate conductors 121 a, 121 b, and 131.

A plurality of island-shaped semiconductor members 154 a, 154 b, 156,157 a, and 157 b made of a hydrogenated amorphous silicon (abbreviatedto a-Si) or polysilicon are formed on the gate insulating film 140. Thesemiconductor members 154 a and 154 b are disposed on the gateelectrodes 124 a and 124 b. The semiconductor members 156 coverboundaries of the gate lines 121. The semiconductor members 157 a and157 b partially overlap the boundary lines of the storage electrode 137.

A plurality of island-shaped ohmic contacts 163 a, 163 b, 165 a, 165 b,and 167 b are formed on semiconductor members 154 a, 154 b, and 157 b. Aplurality of island-shaped ohmic contacts are foamed on semiconductormembers 156 and 157 a. The ohmic contacts 163 a, 163 b, 165 a, 165 b,and 167 b may be made of made of silicide or an n+ hydrogenatedamorphous silicon which is heavily doped with n-type impurities such asphosphorus (P). Pairs of the ohmic contacts 163 a and 165 b and theohmic contacts 163 b and 165 b are disposed on the semiconductor members154 a and 154 b, respectively.

Side surfaces of the semiconductor members 154 a, 154 b, 156, 157 a, and157 b and the ohmic contacts 163 a, 163 b, 165 a, 165 b, and 167 b arealso slanted with respect to the surface of the substrate 100 at anangle in a range of about 30° to about 80°.

A plurality of data conductors including a plurality of data lines 171and a plurality of pairs of first and second drain electrodes 175 a and175 b are fanned on the ohmic contacts 163 a, 163 b, 165 a, 165 b, and167 b and the gate insulating film 140.

The data lines 171 transmitting data signals mainly extend in thelongitudinal direction to intersect the gate lines 121 a and 121 b andthe storage electrode lines 131. The data lines 171 include a pluralityof first and second source electrodes 173 a and 173 b which protrudetoward the first and second gate electrodes 124 a and 124 b and endportions 179 which have wide areas for connection to other layers orexternal driver circuits.

The first and second drain electrodes 175 a and 175 b are separated fromeach other. In addition the first and second drain electrodes are alsoseparated from the data line 171.

The first drain electrode 175 a includes a bar-shaped end portion 176 awhich faces the first source electrode 173 a with respect to the gateelectrode 124 a interposed therebetween, an expansion portion 177 awhich has a shape of a wide rectangle at the one end thereof opposite tothe bar-shaped end portion 176 a, and a line-shaped connection portion176 aa which connects the expansion portion 177 a and the end portion176 a. The extension portion 177 a overlaps the storage electrode 137.The bar-shaped end portion 176 a overlaps the first gate electrode 124 aand is partially surrounded by the U-shaped first source electrode 173a. The connection portion 176 aa of the first drain electrode 175 a ismostly located on the extension portion 139. The connection portion 176aa extends along the extension portion 139 and is located within alongitudinal boundary line of the extension portion 139.

Similarly, the second drain electrode 175 b includes a bar-shaped endportion 176 b which faces the second source electrode 173 b with respectto the gate electrode 124 b interposed therebetween, an expansionportion 177 b which has a shape of a wide rectangle at the one endthereof opposite to the bar-shaped end portion 176 b, and a line-shapedconnection portion 176 ab which connects the expansion portion 177 b andthe end portion 176 b. The extension portion 177 b overlaps the storageelectrode 137. The bar-shaped end portion 176 b overlaps the second gateelectrode 124 b and is partially surrounded by the U-shaped secondsource electrode 173 b. The area of the expansion portion 177 b of thesecond drain electrode 175 b is smaller than that of the expansionportion 177 a of the first drain electrode 175 a.

The storage capacitance can be increased by providing the extensionportion 139 under the connection portion 176 aa of the first drainelectrode 175 a. Accordingly, the area of the storage electrode 137 canbe reduced, to thereby increase the aperture ratio of the liquid crystaldisplay apparatus.

The first/second gate electrode 124 a (124 b), the first/second sourceelectrode 173 a (173 b), and the first/second drain electrode 175 a (175b) together with the first and second semiconductor members 154 a (154b) constitute first/second thin film transistor Qa (Qb). The channel ofthe first/second thin film transistor Qa (Qb) is formed in thefirst/second semiconductor member 154 a (154 b) between the first/secondsource electrode 173 a (173 b) and the first/second drain electrode 175a (175 b).

For instance, side surfaces of the data conductors 171, 175 a, and 175 bmay also be slanted with respect to the surface of the substrate 110 atan angle ranging from about 30° to about 80°.

The ohmic contacts 163 a, 163 b, 165 a, 165 b, and 167 b are interposedonly between the underlying semiconductor members 154 a, 154 b, and 157b and the overlying data conductors 171, 175 a, and 175 b and reducecontact resistance therebetween. The semiconductor members 156, 157 a,157 b disposed on the gate lines 121 a and 121 b and the storageelectrode lines 131 allows the profile of surfaces to be smoothed, sothat the disconnection of the data lines 171 and the drain electrodes175 a and 175 b can be prevented. The island-shaped semiconductormembers 154 a and 154 b have exposed portions which do not cover regionsbetween the source electrodes 173 a and 173 b and the drain electrodes175 a and 175 b and the data conductors 171, 175 a, and 165 b.

A protective layer 180 is formed on the data conductors 171, 175 a, and175 b and the exposed portions of the semiconductor members 154 a and154 b. The protective layer 180 is made of an inorganic insulatingmaterial or an organic insulating material, and a surface thereof may beplanarized. A plurality of contact holes 182, 185 a, and 185 b whichexpose the end portions 179 of the data lines 171 and the expansionportions 177 a and 177 b of the drain electrodes 175 a and 175 b,respectively, are formed on the protective layer 180. A plurality ofcontact holes 181 a and 181 b which expose end portions 129 a and 129 bof the gate lines 121 a and 121 b are formed on the protective layer 180and the gate insulating layer 140.

A plurality of pixel electrodes 191 including first and second sub pixelelectrodes 191 a and 191 b and a plurality of contact assistants 81 a,81 b, and 82 are formed on the protective layer 180. The components maybe made of a transparent conducive material such as, for example, ITOand IZO or a reflective metal such as, for example, aluminum (Al),silver (Ag), chromium (Cr), and an alloy thereof.

The pixel electrode 191 has a shape of an approximate rectangle havingfour chamfered corners which has an angle of about 45° with respect tothe gate lines 121 a and 121 b.

A pair of the first and second sub pixel electrodes 191 a and 191 bconstituting the pixel electrode 191 are engaged with each other withgaps 92 and 93 interposed therebetween. The second sub pixel electrode191 b has a shape of isosceles trapezoid of which base is recessed in ashape of trapezoid. Moreover, most portions of the second sub pixelelectrode 191 b are surrounded by the first sub pixel electrode 191 a.The first sub pixel electrode 191 a includes upper, lower, and centraltrapezoids which are connected to each other at the left side.

The pixel electrode 191 has a pair of first primary edges 193 and 194facing each other and second primary edges which are connected to thefirst primary edges 193 and 194 and include a plurality of sawteeth 90and lower edges 90 c connecting the sawteeth 90. Each of the sawteeth 90includes first and second slanted edges 90 a and 90 d which are slantedwith respect to the first primary edges 193 and 194 and an upper edge 90b. The first primary edges 193 and 194 are parallel to the gate lines121. The first primary edges 193 and 194 and the second primary edgesconstitute an approximate rectangle. The pixel electrode 191 has thefour chamfered corners which has an angle of about 45° with respect tothe gate lines 121. The first slanted edge 90 a partially overlaps thedata line 171. The first slanted edges 90 a of the adjacent two pixelelectrodes 191 are disposed to face each other in parallel to eachother.

The first sub pixel electrode 191 a includes cutout portions 94 a and 94b which extend from an upper side of an upper trapezoid and a lower sideof a lower trapezoid toward the right side thereof, respectively. Acentral trapezoid of the first sub pixel electrode 191 a is insertedinto a receded lower side of the second sub pixel electrode 191 b. Inaddition, the first sub pixel electrode 191 a includes a central cutoutportion 91 which has a transverse portion and a pair of slanted portionsconnected thereto. The transverse portion extends shortly along atransverse central line of the first sub pixel electrode 191 a. A pairof the slanted portions extend from the transverse portion toward theleft side of the first sub pixel electrode 191 a with an angle of 45°with respect to the storage electrode line 131. The gaps 92 and 93between the first and second sub pixel electrodes 191 a and 191 binclude two pairs of upper and lower slanted portions and a longitudinalportion which have an angle of about 45° with respect to the gate lines121 a and 121 b. Hereinafter, for the convenience of description, thegaps 92 and 93 are referred to as a cutout portion. The cutout portions91 to 94 b have an inversion type of symmetry with respect to thestorage electrode line 131. The cutout portions 91 to 94 b extend inperpendicular to each other with slanted angles of about 45° withrespect to the gate lines 121 a and 121 b. The pixel electrode 191 isdivided into a plurality of partitions by the cutout portions 91 to 94b.

Accordingly, the upper and lower half regions with respect to thestorage electrode line 131 bisecting the pixel electrode 191 in thetransverse direction are divided into four partitions by the cutoutportions 91 to 94 b.

The number of the partitions and the number of the cutout portions mayvary according to design factors such as, for example, the size of thepixel electrode 191, the ratio of lengths of the transverse andlongitudinal sides of the pixel electrode 191, and the types orcharacteristics of the liquid crystal layer 3.

The first and second sub pixel electrodes 191 a and 191 b are connectedto the first and second drain electrodes 175 a and 175 b through thecontact holes 185 a and 185 b and applied have data voltages appliedthereto from the first and second drain electrodes 175 a and 175 b. Apair of the sub pixel electrodes 191 a and 191 b have differentpredetermined data voltages for one input image signal applied thereto.The sizes of the data voltages may be determined according to the areasand shapes of the sub pixel electrodes 191 a and 191 b. In addition, theareas of the sub pixel electrodes 191 a and 191 b may be different fromeach other. As an example,the second sub pixel electrode 191 b may havea higher voltage applied thereto than applied to the first sub pixelelectrode 191 a, and the area of the second sub pixel electrode 191 bmay be smaller than that of the first sub pixel electrode 191 a.

The sub pixel electrodes 191 a and 191 b which have the data voltagesapplied thereto and the common electrode 270 which have the commonvoltage applied thereto constitute first and second liquid crystalcapacitors which sustain the applied voltages after the thin filmtransistor turns off. Each of the liquid crystal capacitors includes acorresponding portion of the liquid crystal layer 3 as the dielectricmember.

The first and second sub pixel electrodes 191 a and 191 b and theexpansion portions 177 a and 177 b of the drain electrodes 173 a and 173b electrically connected thereto overlap the storage electrode 137, theextension portion 139, and the storage electrode line 131 so as toconstitute a storage capacitor for strengthening a voltage storagecapacity of the liquid crystal capacitor.

The contact assistants 81 a, 81 b, and 82 are connected to the endportions 129 a and 129 b of the gate lines 121 a and 121 b and the endportion 179 of the data line 171 through the contact holes 181 a, 181 b,and 182, respectively.

Now, the common electrode panel 200 will be described in detail.

A light blocking member 220 is formed on the insulating substrate 210made of a transparent glass or a plastic material. The light blockingmember 220 include line-shaped portions corresponding to the data lines171, enlarged portions formed by enlarging some portions of the lightblocking member 220, and plane-shaped portions corresponding to the thinfilm transistors. The light blocking member 220 prevents light leakagebetween the pixel electrodes 191 and defining opening regions facing thepixel electrodes. However, the light blocking member 220 may furtherinclude a plurality of opening portions facing the pixel electrodes 191and having substantially the same shape as the pixel electrodes 191.

A plurality of color filters 230 are formed on the substrate 210. Mostportions of the color filters 230 are disposed in regions surrounded bythe light-blocking member 220. In addition, the color filters 230 extendalong rows of the pixel electrodes 191 in the longitudinal direction.Each of the color filters 230 can display one of primary colors such asred, green, and blue.

A cover film 250 is formed on the color filters 230 and thelight-blocking member 220. The cover film 250 may be made of an (e.g.,organic) insulating material. The cover film 250 prevents the colorfilters 230 from being exposed and provides a planarized surface. Thecover film 250 may be omitted.

A common electrode 270 is formed on the cover film 250. The commonelectrode 270 is made of a transparent conductive material such as, forexample, ITO and IZO.

A plurality of cutout portions 71, 72, 73 a, 73 b, 74 a, 74 b, and 75are formed on the common electrode 270.

One cutout portion set 71-75 faces one pixel electrode 191 and includesa central cutout portion 71, first to third lower slanted cutoutportions 72, 73 a, and 74 a, first to third upper slanted cutoutportions 72, 73 b, and 74 b, and a connection portions 75. The cutoutportions 71, 72, 73 a, 73 b, 74 a, and 74 b are disposed between theadjacent cutout portions 91, 92, 93 a, 93 b, 94 a, and 94 b of the pixelelectrode 191 or between the cutout portions 91, 92, 93 a, 93 b, 94 a,and 94 b and the chamfered edge of the pixel electrode 191. In addition,each of the cutout portions 71, 72, 73 a, 73 b, 74 a, and 74 b extendssubstantially in parallel to the lower cutout portions 93 a and 94 a orupper cutout portions 93 b and 94 b of the pixel electrode 191 andinclude at least one slanted portion.

The first lower and upper slanted cutout portions 72 extendsubstantially from the right side to the left side of the pixelelectrode 191. The second lower and upper slanted cutout portions 73 aand 73 b extend substantially from the right side to the upper and lowerleft corners of the pixel electrode 191, respectively. The third lowerand upper slanted cutout portions 74 a and 74 b extend substantiallyfrom the right side to the lower and upper sides of the pixel electrode191, respectively. The third lower and upper slanted cutout portions 74a and 74 b include terminated transverse portions which extend from theends of the third lower and upper slanted cutout portions 74 a and 74 bto overlap the lower and upper sides of the pixel electrode 191.

The terminated transverse portion has an obtuse angle with respect tothe slanted cutout portions 74 a and 74 b.

The central cutout portion 71 includes a central transverse portion anda pair of slanted portions. The central transverse portion extendssubstantially from the right side of the pixel electrode 191 along thestorage electrode line 131 in the left direction. A pair of the slantedportions extend substantially in parallel to the lower and upper cutoutportions 72, 73 a, 73 b, 74 a, and 74 b from the end of the centraltransverse portion to the left side of the pixel electrode 191.

One end of the one slanted portion of the central cutout portion 71 andone end of the second lower cutout portion 73 a of the adjacent pixelelectrode are connected with one of the connection portions 75. Also,one end of the other slanted portion of the central cutout portion 71and one end of the second upper cutout portion 73 b of the adjacentpixel electrode are connected with one of the connection portions 75.Additionally, one end of the first lower slanted cutout portion 72 andone end of the third lower slanted cutout portion 74 a of the adjacentpixel electrode are connected with one of the connection portions 75.Moreover, one end of the first upper slanted cutout portion 72 and oneend of the third upper slanted cutout portion 74 b of the adjacent pixelelectrode are connected with one of the connection portions 75. Theconnection portions 75 are parallel to the first slanted edges 90 a ofthe pixel electrode 191 and located at portions corresponding to thedata line 171. The width of the connection portions 75 is larger byabout 8 μm than the interval between the adjacent pixels 191. Theenlarged portions 222 of the light blocking member 220 may have a widthlarger than the other portions corresponding to the connection portions75.

Triangular-shaped notches 7 are formed in the slanted portions of thecutout portions 71 to 74 b. Alternatively, the notches may have variousshapes such as, for example, rectangular, trapezoidal and semicircularshapes. In addition, the notches may be formed in a shape of convex orconcave. Such notches control the alignment of the liquid crystalmolecules 3 located in boundary regions corresponding to the cutoutportions 71 to 74 b.

The number and directions of the cutout portion 71 to 75 may varyaccording to design factors, and the light-blocking member 220 overlapsthe cutout portions 71 to 75 to prevent the light leakage in thevicinity of the cutout portions 71 to 75.

Alignment films 11 and 21 are coated on inner surfaces of the panels 100and 200, respectively. The alignment films 11 and 21 may be avertically-aligned film.

Polarizers are disposed on outer surfaces of the panels 100 and 200,respectively. The transmission axes of the two polarizers areperpendicular to each other, and one of the transmission axes may, forexample, be parallel to the gate lines 121 a and 121 b. In the case of areflective liquid crystal display apparatus, one of the two polarizersmay be omitted.

The liquid crystal display apparatus according to the present embodimentmay further include a phase retardation film for compensating forretardation of the liquid crystal layer 3. The phase retardation filmshave birefringence and have a function of inversely compensating for thebirefringence of the liquid crystal layer 3.

The liquid crystal layer 3 has a negative anisotropic permittivity, andthe liquid crystal molecules 31 of the liquid crystal layer 3 arealigned so that the major axes thereof are perpendicular to the surfacesof the two panels 100 and 200 when no electric field is applied to theliquid crystal molecules. Therefore, incident light cannot pass throughthe perpendicular polarizers and is thus blocked.

When a voltage difference between the two ports of the first or secondliquid crystal capacitor is generated by applying the common voltage tothe common electrode 270 and the data voltage to the pixel electrode191, an electric field is generated in the liquid crystal layer 3 in adirection substantially perpendicular to the panels 100 and 200. Inresponse to the electric field, the liquid crystal molecules have atendency to change the major axis direction to be perpendicular to thedirection of the electric field. According to the degree of the tiltedangle of the liquid crystal molecules, polarization of the light passingthrough the liquid crystal layer 3 changes. The change in thepolarization results in a change in transmittance of the light due tothe polarizers, so that an image is displayed on the liquid crystaldisplay apparatus.

The tilted angle of the liquid crystal molecules varies according to thestrength of the electric filed. If low and high voltages are applied tothe first and second sub pixel electrodes, respectively, the voltage Vaof the first liquid crystal capacitor is higher than the voltage Vb ofthe second liquid crystal capacitor. Therefore, the tilted angles of theliquid crystal molecules in the first and second sub pixels aredifferent from each other. As a result, the brightnesses of the two subpixel electrodes are different from each other. Accordingly, byadjusting the voltage Va of the first liquid crystal capacitor and thevoltage Vb of the second liquid crystal capacitor, the brightness of theimage seen from a side of the liquid crystal display apparatus can beclosest to the brightness of the image seen from a front of the liquidcrystal display apparatus, thereby improving the side viewing angle.

The tilted angle for the liquid crystal molecules is determined by ahorizontal component of the electric field generated from distortion ofthe electric field by the cutout portion 71 to 74 b and 91 to 94 b ofthe electric field generating electrodes 191 and 279 and slanted edgesof the pixel electrode 191. The horizontal component of the electricfield is perpendicular to the edges of the cutout portions 71 to 74 band 91 to 94 b and the slanted edges of the pixel electrode 191.

Referring to FIG. 26, one cutout portion set of the cutout portions 71to 74 b and 91 to 94 b divide one pixel electrode 191 into a pluralityof sub areas having two slanted primary edges. Since the tilteddirections of the liquid crystal molecules in the sub areas aredetermined by the horizontal component of the electric field, the tilteddirections of the liquid crystal molecules include roughly fourdirections.

Further, as the liquid crystal molecules 31 can be adjusted to havevarious tilted angles, the reference viewing angle of the liquid crystaldisplay apparatus can be increased.

In addition, by providing the sawteeth to the side of the pixelelectrode 191 adjacent to the data line 171, the secondary electricfield generated between the adjacent pixel electrodes 191 can controlthe alignment of the liquid crystal molecules 31 in the sub areas. Inaddition, by providing the connection portions 75 at the positionscorresponding to the regions where the first slanted edges 90 a of theadjacent two pixel electrodes 191 face each other, the alignment of theliquid crystal molecules 31 in the sub areas can be determined.

The shapes and arrangements of the cutout portions 71 to 74 b and 91 to94 b for determining the tilted directions of the liquid crystalmolecules may be modified in various manners. At least one of the cutoutportions 71 to 74 b and 91 to 94 b may be replaced with a protrusion ora depression. The protrusions may be made of an organic or inorganicmaterial and disposed above or under the electric field generatingelectrodes 191 and 270.

In addition, if the area of the second sub pixel electrode 191 b appliedwith a high voltage is designed to be smaller than that of the first subpixel electrode 191 a, distortion in a side viewing gamma curve can bereduced. For example, if the area ratio of the first and second subpixel electrodes 191 a and 191 b is about 2:1, the side viewing gammacurve is closer than the front viewing gamma curve, so that sidevisibility can be improved.

Now, a liquid crystal display apparatus according to another exemplaryembodiment of the present invention will be described in detail withreference to FIGS. 28 to 30.

FIG. 28 is a view showing a layout of a liquid crystal display apparatusaccording to another exemplary embodiment of the present invention. FIG.29 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXIX-XXIX of FIG. 28.

FIG. 30 is a cross sectional view showing the liquid crystal displayapparatus taken along line XXI-XXX of FIG. 28.

Referring to FIGS. 28 to 30, the liquid crystal display apparatusincludes a thin film transistor panel 100 and a common electrode panel200 which face each other and a liquid crystal layer 300 interposedbetween the panels 100 and 200.

Firstly, the thin film transistor panel 100 will be described in detail.

A plurality of gate conductors including a plurality of gate lines 121and a plurality of storage electrode lines 131 are disposed on aninsulating substrate 110 made of a transparent glass or a plasticmaterial.

The gate lines 121 transmitting gate signals mainly extend in thetransverse direction. The gate lines 121 include first and second gateelectrodes 124 a and 124 b which protrude upwardly and end portions 129which have wide areas for connection to other layers or external drivercircuits.

The storage electrode lines 131 which are applied with predeterminedvoltages extend substantially in parallel to the gate lines 121. Each ofthe storage electrode lines 131 is disposed between adjacent two gatelines 121 and separated by substantially the same distance from the twogate lines 121. The storage electrode lines 131 include storageelectrodes 137 which are enlarged upwardly and downwardly and bar-shapedextension portions 139 which extend from the storage electrodes 137downwardly The storage electrode 137 has the shape of a rectangle and issymmetrically disposed with respect to the storage electrode line 131.The extension portion 139 extends to a portion near the first gateelectrode 124 a. However, various shapes and arrangement may be used forthe storage electrode lines 131 and the storage electrodes 137.

A gate insulating layer 140 made of a silicon nitride SiN_(x) or thelike is formed on the gate conductors 121 and 131.

A plurality of island-shaped semiconductor members 154 a, 154 b, 157 a,and 157 b made of a hydrogenated amorphous silicon or polysilicon areformed on the gate insulating film 140. The semiconductor members 154 aand 154 b are disposed on the gate electrodes 124 a and 124 b.

A plurality of island-shaped ohmic contacts 163 a, 163 b, 165 a, 165 b,167 a, and 167 b formed on semiconductor members 154 a, 154 b, 157 a,and 157 b. The ohmic contacts 163 a, 163 b, 165 a, 165 b, 167 a, and 167b may be made of made of silicide or an n+ hydrogenated amorphoussilicon which is heavily doped with n-type impurities such as phosphorus(P). A pair of the ohmic contacts 163 a and 163 b and a pair of theohmic contacts 165 a and 165 b are disposed on the semiconductor members154 a and 145 b, respectively. A pair of the ohmic contacts 167 a and167 b are disposed on the semiconductor members 157 a and 157 b,respectively.

A plurality of data conductors including a plurality of data lines 171 aand 171 b and a plurality of pairs of first and second drain electrodes175 a and 175 b are formed on the ohmic contacts 163 a, 163 b, 165 a,165 b, 167 a, and 167 b and the gate insulating film 140.

The data lines 171 a and 171 b transmitting data signals mainly extendin the longitudinal direction to intersect the gate lines 121 and thestorage electrode lines 131. The data lines 171 a and 171 b include aplurality of first and second source electrodes 173 a and 173 b whichprotrude toward the first and second gate electrodes 124 a and 124 b andend portions 179 a and 179 b which have wide areas for connection toother layers or external driver circuits.

The first and second drain electrodes 175 a and 175 b are separated fromeach other and from the data lines 171 a and 171 b. The first and seconddrain electrodes 175 a and 175 b face the source electrodes 173 a and173 b with respect to the gate electrodes 124 a and 124 b interposedtherebetween. The first and second drain electrodes 175 a and 175 binclude expansion portions 177 a and 177 b which have a shape of a widerectangle at the one end thereof, bar-shaped end portions 176 a and 176b at the other ends thereof, and connection portions 176 aa and 176 bbconnecting the expansion portions 177 a and 177 b and the end portions176 a and 176 b. The expansion portions 177 a and 177 b overlap thestorage electrode 137. The bar-shaped end portions 176 a and 176 boverlap the gate electrodes 124 a and 124 b and are partially surroundedby the U-shaped source electrodes 173 a and 173 b.

The connection portion 176 aa of the first drain electrode 175 a ismostly located on the extension portion 139. For example, the connectionportion 176 aa extends along the extension portion 139 and is locatedwithin an longitudinal boundary line of the extension portion 139. Thearea of the expansion portion 177 b of the second drain electrode 175 bis smaller than that of the expansion portion 177 a of the first drainelectrode 175 a.

The first/second gate electrode 124 a (124 b), the first/second sourceelectrode 173 a (173 b), and the first/second drain electrode 175 a (175b) together with the first and second semiconductor members 154 a (154b) constitute first/second thin film transistor Qa (Qb). The channel ofthe first/second thin film transistor Qa (Qb) is formed in thefirst/second semiconductor member 154 a (154 b) between the first/secondsource electrode 173 a (173 b) and the first/second drain electrode 175a (175 b).

The ohmic contacts 163 a, 163 b, 165 a, 165 b, 167 a, and 167 b areinterposed only between the underlying semiconductor members 154 a, 154b, 157 a, and 157 b and the overlying data lines 171 a and 171 b and thedrain electrodes 175 a and 175 b and have a function of reducing contactresistance therebetween. The island-shaped semiconductor members 154 aand 154 b have exposed portions which do not cover regions between thesource electrodes 173 a and 173 b and the drain electrodes 175 a and 175b, the data lines 171 a and 171 b, and the drain electrodes 175 a and175 b.

A protective layer (e.g., passivation layer) 180 is formed on the datalines 171 a and 171 b, the drain electrodes 175 a and 175 b, and theexposed portions of the semiconductor members 154 a and 154 b.

A plurality of contact holes 185 a, 185 b, 182 a, and 182 b which exposethe expansion portions 177 a and 177 b of the drain electrodes 175 a and175 b and the end portions 179 a and 179 b of the data lines 171 a and171 b, respectively, are formed on the protective layer 180. A pluralityof contact holes 181 which expose end portions 129 of the gate lines 121are formed on the protective layer 180 and the gate insulating layer140.

A plurality of pixel electrodes 191 including first and second sub pixelelectrodes 191 a and 191 b and a plurality of contact assistants 81, 82a, and 82 b are formed on the protective layer 180. The components maybe made of a transparent conducive material such as, for example, ITOand IZO or a reflective metal such as, for example, aluminum (Al),silver (Ag), chromium (Cr), and an alloy thereof.

The pixel electrode 191 has the shape of a rectangle having fourchamfered corners which has an angle of about 45° with respect to thegate lines 121.

A pair of the first and second sub pixel electrodes 191 a and 191 bconstituting the pixel electrode 191 are engaged with each other withgaps 92 and 93 interposed therebetween. The second sub pixel electrode191 b has the shape of an isosceles trapezoid of which the base isrecessed in the shape of a trapezoid. Also, most portions of the secondsub pixel electrode 191 b are surrounded by the first sub pixelelectrode 191 a. The first sub pixel electrode 191 a includes upper,lower, and central trapezoids which are connected to each other at theleft side.

The pixel electrode 191 has a pair of first primary edges 193 and 194facing each other and second primary edges which are connected to thefirst primary edges 193 and 194 and include a plurality of sawteeth 90and lower edges 90 c connecting the sawteeth 90. Each of the sawteeth 90includes first and second slanted edges 90 a and 90 d which are slantedwith respect to the first primary edges 193 and 194 and an upper edge 90b. The first primary edges 193 and 194 are parallel to the gate lines121. The first primary edges 193 and 194 and the second primary edgesconstitute an approximate rectangle. The pixel electrode 191 has thefour chamfered corners which has an angle of about 45° with respect tothe gate lines 121. The first slanted edge 90 a partially overlaps thedata line 171. The first slanted edges 90 a of the adjacent two pixelelectrodes 191 are disposed to face each other in parallel to eachother.

The first sub pixel electrode 191 a includes cutout portions 94 a and 94b which extend from an upper side of an upper trapezoid and a lower sideof a lower trapezoid toward the right side thereof, respectively. Acentral trapezoid of the first sub pixel electrode 191 a is insertedinto a receded lower side of the second sub pixel electrode 191 b. Inaddition, the first sub pixel electrode 191 a includes a central cutoutportion 91 which has a transverse portion and a pair of slanted portionsconnected thereto. The transverse portion extends shortly along atransverse central line of the first sub pixel electrode 191 a. A pairof the slanted portions extend from the transverse portion toward theleft side of the first sub pixel electrode 191 a with an angle of about45° with respect to the storage electrode line 131. The gaps 92 and 93between the first and second sub pixel electrodes 191 a and 191 binclude two pairs of upper and lower slanted portions and a longitudinalportion which have an angle of about 45° with respect to the gate lines121.

The cutout portions 91 to 94 b have an inversion symmetry with respectto the storage electrode line 131. The cutout portions 91 to 94 b extendin perpendicular to each other with slanted angles of about 45° withrespect to the gate lines 121. The pixel electrode 191 is divided into aplurality of partitions by the cutout portions 91 to 94 b.

Accordingly, the upper and lower half regions with respect to thestorage electrode line 131 bisecting the pixel electrode 191 in thetransverse direction are divided into four partitions by the cutoutportions 91 to 94 b.

The number of the partitions and the number of the cutout portions mayvary according to design factors such as, for example, the size of thepixel electrode 191, the ratio of lengths of the transverse andlongitudinal sides of the pixel electrode 191, and the types orcharacteristics of the liquid crystal layer 3.

The first and second sub pixel electrodes 191 a and 191 b are connectedto the first and second drain electrodes 175 a and 175 b through thecontact holes 185 a and 185 b and applied with data voltages from thefirst and second drain electrodes 175 a and 175 b. A pair of the subpixel electrodes 191 a and 191 b are applied with differentpredetermined data voltages for one input image signal. The sizes of thedata voltages may be determined according to the areas and shapes of thesub pixel electrodes 191 a and 191 b. In addition, the areas of the subpixel electrodes 191 a and 191 b may be different from each other. Forexample, the second sub pixel electrode 191 b has a higher voltageapplied thereto than applied to the first sub pixel electrode 191 a, andthe area of the second sub pixel electrode 191 b may be smaller thanthat of the first sub pixel electrode 191 a.

The first/second sub pixel electrodes 191 a (191 b) is physically andelectrically connected to the first/second drain electrodes 175 a (175b) through the contact holes 185 a (185 b) and has data voltages appliedthereto from the first and second drain electrodes 175 a (175 b). A pairof the sub pixel electrodes 191 a and 191 b have different predetermineddata voltages for one input image signal applied thereto. The sizes ofthe data voltages may be determined according to, for example, the areasand shapes of the sub pixel electrodes 191 a and 191 b. In addition, theareas of the sub pixel electrodes 191 a and 191 b may be different fromeach other. For example, the second sub pixel electrode 191 b may have ahigher voltage applied thereto than applied to the first sub pixelelectrode 191 a, and the area of the second sub pixel electrode 191 bmay be smaller than that of the first sub pixel electrode 191 a.

The sub pixel electrodes 191 a and 191 b having data voltages appliedthereto and the common electrode 270 having the common voltage appliedthereto constitutes first and second liquid crystal capacitors whichsustain the applied voltages after the thin film transistor turns off.

Each of the liquid crystal capacitors includes a corresponding portionof the liquid crystal layer 3 as the dielectric member.

The first and second sub pixel electrodes 191 a and 191 b and theexpansion portions 177 a and 177 b of the drain electrodes 173 a and 173b electrically connected thereto overlap the storage electrode 137, theextension portion 139, and the storage electrode line 131 with the gateinsulating layer 140 interposed therebetween so as to constitute astorage capacitor for strengthening a voltage storage capacity of theliquid crystal capacitor.

The contact assistants 81, 82 a, and 82 b are connected to the endportions 129 of the gate lines 121 and the end portion 179 of the dataline 171 through the contact holes 181, 182 a, and 182 b, respectively.

Now, the common electrode panel 200 will be described in detail.

A light blocking member 220 is formed on the insulating substrate 210made of a transparent glass or a plastic material. The light blockingmember 220 include line-shaped portions corresponding to the data lines171, enlarged portions formed by enlarging some portions of the lightblocking member 220, and plane-shaped portions corresponding to the thinfilm transistors. The light blocking member 220 prevents light leakagebetween the pixel electrodes 191 and defining opening regions facing thepixel electrodes. However, the light blocking member 220 may furtherinclude a plurality of opening portions facing the pixel electrodes 191and having substantially the same shape as the pixel electrodes 191.

A plurality of color filters 230 are formed on the substrate 210. Mostportions of the color filters 230 are disposed in regions surrounded bythe light-blocking member 220. Also, the color filters 230 extend alongrows of the pixel electrodes 191 in the longitudinal direction. Each ofthe color filters 230 can display one of primary colors such as red,green, and blue.

A cover film 250 is formed on the color filters 230 and thelight-blocking member 220. The cover film 250 may be made of an (e.g,organic) insulating material. The cover film 250 prevents the colorfilters 230 from being exposed and provides a planarized surface. Thecover film 250 may be omitted.

A common electrode 270 is formed on the cover film 250. The commonelectrode 270 is made of a transparent conductive material such as, forexample,ITO and IZO.

A plurality of cutout portions 71, 72, 73 a, 73 b, 74 a, 74 b, and 75are formed on the common electrode 270.

One cutout portion set 71-75 faces one pixel electrode 191 and includesa central cutout portion 71, first to third lower slanted cutoutportions 72, 73 a, and 74 a, first to third upper slanted cutoutportions 72, 73 b, and 74 b, and a connection portions 75. The cutoutportions 71, 72, 73 a, 73 b, 74 a, and 74 b are disposed between theadjacent cutout portions 91, 92, 93 a, 93 b, 94 a, and 94 b of the pixelelectrode 191 or between the cutout portions 91, 92, 93 a, 93 b, 94 a,an 94 b and the chamfered edge of the pixel electrode 191. In addition,each of the cutout portions 71, 72, 73 a, 73 b, 74 a, and 74 b extendssubstantially in parallel to the lower cutout portions 92, 93 a, and 94a or upper cutout portions 92, 93 b, and 94 b of the pixel electrode 191and include at least one slanted portion.

The first lower and upper slanted cutout portions 72 extendsubstantially from the right side to the left side of the pixelelectrode 191. The second lower and upper slanted cutout portions 73 aand 73 b extend substantially from the right side to the upper and lowerleft corners of the pixel electrode 191, respectively. The third lowerand upper slanted cutout portions 74 a and 74 b extend substantiallyfrom the right side to the lower and upper sides of the pixel electrode191, respectively. The third lower and upper slanted cutout portions 74a and 74 b include terminated transverse portions which extend from theends of the third lower and upper slanted cutout portions 74 a and 74 bto overlap the lower and upper sides of the pixel electrode 191. Theterminated transverse portions have an obtuse angle with respect to theslanted cutout portions 74 a and 74 b.

The central cutout portion 71 includes a central transverse portion anda pair of slanted portions. The central transverse portion extendssubstantially from the right side of the pixel electrode 191 along thestorage electrode line 131 in the left direction. A pair of the slantedportions extend substantially in parallel to the lower and upper cutoutportions 72, 73 a, 73 b, 74 a, and 74 b from the end of the centraltransverse portion to the left side of the pixel electrode 191.

One end of the one slanted portion of the central cutout portion 71 andone end of the second lower cutout portion 73 a of the adjacent pixelelectrode are connected with one of the connection portions 75.Moreover, one end of the other slanted portion of the central cutoutportion 71 and t one end of the second upper cutout portion 73 b of theadjacent pixel electrode are connected with one of the connectionportions 75.

In addition, one end of the first lower slanted cutout portion 72 andone end of the third lower slanted cutout portion 74 a of the adjacentpixel electrode are connected with one of the connection portions 75.Also, one end of the first upper slanted cutout portion 72 and one endof the third upper slanted cutout portion 74 b of the adjacent pixelelectrode are connected with one of the connection portions 75. Theconnection portions 75 are parallel to the first slanted edges 90 a ofthe pixel electrode 191 and located at portions corresponding to thedata line 171. The width of the connection portions 75 is larger byabout 8 μm than the interval between the adjacent pixels 191. Theenlarged portions 222 of the light blocking member 220 may have a widthlarger than the other portions corresponding to the connection portions75.

Triangular-shaped notches 7 are formed in the slanted portions of thecutout portions 71 to 74 b. Alternatively, the notches may have variousshapes such as, for example, rectangular, trapezoidal and semicircularshapes. In addition, the notches may be formed in a shape of convex orconcave. Such notches control the alignment of the liquid crystalmolecules 3 located in boundary regions corresponding to the cutoutportions 71 to 74 b.

The number and directions of the cutout portion 71 to 75 may varyaccording to design factors, and the light-blocking member 220 overlapsthe cutout portions 71 to 75 to prevent the light leakage in thevicinity of the cutout portions 71 to 75.

In addition, by providing the sawteeth to the side of the pixelelectrode 191 adjacent to the data line 171, the secondary electricfield generated between the adjacent pixel electrodes 191 can controlthe alignment of the liquid crystal molecules 31 in the sub areas. Inaddition, by providing the connection portions 75 at the positionscorresponding to the regions where the first slanted edges 90 a of theadjacent two pixel electrodes 191 face each other, the alignment of theliquid crystal molecules 31 in the sub areas can also be controlled.

Alignment films 11 and 21 are coated on inner surfaces of the panels 100and 200, respectively. The alignment films 11 and 21 may be avertically-aligned film. Polarizers are disposed on outer surfaces ofthe panels 100 and 200, respectively.

According to a liquid crystal display apparatus of the exemplaryembodiments of the present invention, longitudinal cutout portions amongcutout portions of a common electrode are removed, so that the removedareas can be used as a light transmitting area. In addition, sinceconnection portions corresponding to gaps between the pixel electrodesare provided to the common electrode, alignment of liquid crystalmolecules in sub pixel areas can be controlled due to secondary electricfields, thereby reducing texture and improving aperture ratio andtransmittance of the liquid crystal display apparatus.

Having described the exemplary embodiments of the present invention, itis further noted that it is readily apparent to those of reasonableskill in the art that various modifications may be made withoutdeparting from the spirit and scope of the invention which is defined bythe metes and bounds of the appended claims.

1. A display panel comprising: a substrate; a plurality of second signallines disposed on the substrate; a plurality of second signal linesinsulatingly crossing the first signal lines; and a plurality of pixelelectrodes each connected to one of the plurality of first signal linesand one of the plurality of second signal lines, wherein a pixelelectrode of the plurality of pixel electrodes comprises: a pair offirst primary edges substantially parallel to the first signal lines andfacing each other; and a pair of second primary edges connected to thefirst primary edges and facing each other and comprises a plurality ofprotrusions each having a sawteeth shape with slanted edges with respectto the first primary edges, wherein the slanted edges of the protrusioncomprises a first edge and a second edge not parallel to each other,both the first edge and second edge forming an angle less than 90 degreewith the first primary edges and being slanted in a same direction withrespect to the first primary edges, and wherein the second primary edgefurther comprises a third edge connecting two neighboring protrusions ofthe plurality of protrusions, the third edge being substantiallyparallel to the second signal lines.
 2. The display panel of claim 1,wherein the protrusions further comprising a third edge connecting thefirst edge and the second edge.
 3. The display panel of claim 2, whereinthe third edge of the protrusions is substantially perpendicular to thefirst primary edges.
 4. The display panel of claim 1, wherein the pixelelectrode further comprises a cutout portion which has a slanted anglewith respect to the first primary edges.
 5. The display panel of claim4, wherein the second edge is parallel to the cutout portion.
 6. Thedisplay panel of claim 4, wherein the second edge is on an extensionline of an edge of the cutout portion.
 7. The display panel of claim 1,wherein an envelope of the protrusions and the first primary edgesconstitute a rectangle.
 8. The display panel of claim 7, wherein atleast one of corners of the rectangle is a chamfered slanted edge. 9.The display panel of claim 8, wherein the chamfered slanted edge of therectangle has an angle of about 45° with respect to the first primaryedges.
 10. The display panel of claim 1, wherein at least a portion ofthe protrusion overlaps the second signal line.
 11. The display panel ofclaim 1, wherein the protrusions of adjacent second primary edges ofadjacent pixel electrodes are engaged with each other.
 12. The displaypanel of claim 1, further comprising a common electrode opposing theplurality of pixel electrodes, wherein the common electrode comprises afirst cutout portion crossing a gap between adjacent pixel electrodes.13. The display panel of claim 12, wherein an edge of the first cutoutportion is substantially parallel to the first edge of the protrusion.14. The display panel of claim 13, wherein the first cutout portionoverlaps the first edge of the protrusion.
 15. The display panel ofclaim 13, wherein the pixel electrode further comprises a cutout portionwhich has a slanted angle with respect to the first primary edges, andthe first edge is not parallel to the cutout portion of the pixelelectrode.
 16. The display panel of claim 12, wherein the commonelectrode further comprises a second cutout portion facing the pixelelectrode.
 17. The display panel of claim 16, wherein the first cutoutportion connects adjacent second cutout portions.
 18. The display panelof claim 16, wherein the first cutout portion has an obtuse angle withrespect to the second cutout portion.
 19. The display panel of claim 12,wherein a width of the first cutout portion is larger than a width ofthe gap.
 20. The display panel of claim 12, wherein the first cutoutportion faces the second signal line.